Conduction-Electron Spin Resonance in HgSe Crystals

Veĭnger, A. I.; Kochman, I. V.; Okulov, V. I.; Andriichuk, M. D.; Paranchich, L. D.

doi:10.1134/s1063782618130225

Cited by 2 publications

(6 citation statements)

References 13 publications

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“…Curve analysis at 90 • (Fig. 3) showed that quantum limit field is 111.5 kOe, that is much less than at HgSe doping with Fe ions (∼ 850 kOe) [4].…”

Section: Sdh Effect Manifestationmentioning

confidence: 93%

“…VARIAN" with continuous-flow cryostat " Oxford Instruments ESR-910", that is capable to maintain the sample temperature within wide ranges of (2−300) K. Peculiarities of the experimental results interpretation in microwave range are described in detail in study [4].…”

Section: Experiments Were Performed Using Epr Spectrometer E-112 Made...mentioning

confidence: 99%

“…Detailed discussion of SdH oscillations in HgSe crystals is presented in the article of Whitsetta [2]. Application of microwave absorption for registration of this effect in InAs is described in the study of Veinger et al [3], while the direct registration of oscillating magnetoresistance in microwave range in HgSe crystal with impurities of Fe of low concentration (< 1 at%) is presented in the article [4].…”

Section: Introductionmentioning

confidence: 99%

“…Technique of electron paramagnetic resonance (EPR), described in studies [3,4], allows to increase the accuracy of measurement of magnetic field intensity and to detect the quantum oscillations of kinetic and thermodynamic coefficients in weaker fields. Physics of this event assumes that microwave magnetic field excites the circular currents in a sample, and these currents value is defined by the sample resistance.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the EPR spectrometer is capable to register not only the microwave absorption change, related to spin flip, but also the microwave absorption change, related to sample resistance change, for instance, semiconductor [11,12] or superconductor [13,14]. We examined the peculiarities of the positive microwave absorption in HgSe monocrystal with impurities of Fe of low concentration in weak fields in study [15], while in SdH oscillations appearing area (H > 10 kOe)in study [4]. Results of the study of the microwave absorption in HgSe monocrystal with impurities of Co of low concentration in weak fields are described in article [16].…”

Section: Introductionmentioning

confidence: 99%

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Peculiarities of magnetic oscillations in HgSe monocrystal with Co impurities of low concentration (<1 at%)

Veĭnger

Kochman

et al. 2022

Semiconductors

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The results of experimental studies of magnetoresistance oscillations are described for a HgSe monocrystal with Co impurities of low concentration (<1 at%). It has been discovered that at such impurity concentrations (~1018 cm-3) there exists two types of magnetic oscillations: Shubnikov de Haas oscillations at low temperatures (T<10 K) and magnetophonon oscillations at higher temperatures (T>10 K). The first ones are caused by the interaction of electrons with magnetic fieled inside of a Landau sublevel and the latter --- by the interaction with longitudinal optical phonons. The differences of these oscillations are characterized. A hypothesis of a nature of magnetophonon oscillations in such structures is proposed. Keywords: 3d-impurities of low concentration, zero-gap semiconductors, magnetophonon oscillations, SdH oscillations, optical and acoustic phonons.

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“…Curve analysis at 90 • (Fig. 3) showed that quantum limit field is 111.5 kOe, that is much less than at HgSe doping with Fe ions (∼ 850 kOe) [4].…”

Section: Sdh Effect Manifestationmentioning

confidence: 93%

Section: Experiments Were Performed Using Epr Spectrometer E-112 Made...mentioning

confidence: 99%