1974
DOI: 10.1070/pu1974v016n06abeh004091
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Conduction-electron paramagnetic resonance in metals

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Cited by 7 publications
(5 citation statements)
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“…The increase in intensity of the g ¼ 2.001 signal aer annealing in hydrogen can be explained by the growing concentration of carbon vacancies at which unpaired electron density is localized. According to the calculations made by Khabibullin et al, 29 hydrogen adsorption on TiC is preferable on carbon atoms of the (001) and (111) planes. At elevated temperatures, formation of CH x fragments takes place.…”
Section: Tic Powder Aer Thermal Treatment In Hydrogenmentioning
confidence: 99%
“…The increase in intensity of the g ¼ 2.001 signal aer annealing in hydrogen can be explained by the growing concentration of carbon vacancies at which unpaired electron density is localized. According to the calculations made by Khabibullin et al, 29 hydrogen adsorption on TiC is preferable on carbon atoms of the (001) and (111) planes. At elevated temperatures, formation of CH x fragments takes place.…”
Section: Tic Powder Aer Thermal Treatment In Hydrogenmentioning
confidence: 99%
“…Conduction electron spin resonance (CESR) is very important to understand the spin relaxation of the electrons in metals. This allowed to study the temperature dependent spin relaxation of conduction electrons via the line width and gave the first insights into the time scales of spin relaxation 100 , 101 , 102 . It motivated the theoretical work.…”
Section: Theoretical Perspectivesmentioning
confidence: 99%
“…This allowed to study the temperature dependent spin relaxation of conduction electrons via the line width and gave the first insights into the time scales of spin relaxation. [95][96][97] It motivated the theoretical work. Later, the Kambersk y model 98 was developed for energy relaxation of the ferromagnetic resonance (FMR).…”
Section: Theoretical Perspectivesmentioning
confidence: 99%
“…where D is the coefficient of diffusion. The use of the values m F = 9.7 9 10 5 m/s as for bulk regular graphite p band (Kelly 1981), K = 10 nm and d = 59 lm (293 K), 91 lm (4.2 K) leads, according to Eq. 3, to the diffusion time T D = 5.4 9 10 -7 s for T = 293 K and 12.9 9 10 -7 s for 4.2 K. We consider that the reason for the T D increase with temperature lowering is related to the growing skin depth d due to the increase in the resistivity (q = 3 9 10 -4 Xm for T = 293 K and 6.5 9 10 -4 Xm for 4.2 K; our unpublished results).…”
Section: Structure Peculiarity Of Shungite From Shunga Depositmentioning
confidence: 99%