Conduction Band Structure of Tellurium

Shinno, H.; Yoshizaki, Ryozo; Tanaka, Shōji; Doi, Takumi; Kamimura, Hiroshi

doi:10.1143/jpsj.35.525

Cited by 52 publications

(24 citation statements)

References 17 publications

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“…Table I lists the calculated hole effective masses parallel and perpendicular to the c axis at the maximum of the uppermost and lower valence bands, and the electron effective masses at the conduction band minimum (CBM). For comparison we also list the corresponding experimental values [35,36]. The bands near the Fermi level in Fig.…”

Section: Resultsmentioning

confidence: 99%

Elemental tellurium as a chiralp-type thermoelectric material

2014

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The thermoelectric transport properties of elemental tellurium are investigated by density functional theory combined with the Boltzmann transport equation in the rigid band approximation. We find that the thermoelectric transport properties parallel and perpendicular to the helical chains are highly asymmetric (almost symmetric) for p-(n-) type doped tellurium due to the anisotropic (isotropic) hole (electron) pockets of the Fermi surface. The electronic band structure shows that the lone-pair derived uppermost heavy-hole and extremely light-hole lower valence bands offer the opportunity to obtain both a high Seebeck coefficient and electrical conductivity along the chains through Sb or Bi doping. Furthermore, the stairlike density of states yields a large asymmetry for the transport distribution function relative to the Fermi energy which leads to large thermopower. The calculations reveal that tellurium has the potential to be a good p-type thermoelectric material with an optimum figure of merit zT of 0.31 (0.56) at room temperature (500 K) at a hole concentration around 1 × 10 19 cm −3 . Exploiting the rich chemistry of lone pairs in chiral solids may have important implications for the discovery of high-zT polychalcogenide-based thermoelectric materials.

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Section: Resultsmentioning

confidence: 99%

Elemental tellurium as a chiralp-type thermoelectric material

2014

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“…The conduction band minima of tellurium are located near point H of the Brillouin zone, and the surface of constant energy is an ellipsoid of revolution around the A,-axis [7] as well as the valence band maxima. The deformation potential of the band extremum of this symmetry is represented by two independent components which are El and E3 [ l , 111.…”

Section: Xhvs L/tcharacteristics Is Given By -Ch/2k From ( 3 ) Thementioning

confidence: 99%

“…0 3 8~~ for electrons, respectively [GI; nz* is calculated to be 0.080mo from these values. Another m* is calculated to be 0.13m0 from the other reported values of the electron mass which are mil = 0.070m0, and ml = 0.104 mo [ 7 ] . Our obtained value of m* for tellurium agrees with these values rather well in spite of the above-mentioned assumptions neglecting the complex band structure of tellurium.…”

Section: Transition Regionmentioning

confidence: 99%

Piezoresistance of tellurium and selenium–tellurium mixed crystals

Toru¹

1975

Physica Status Solidi (b)

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The piezoresistance coefficients of Te, Se,Te,,, and Se,,Te,, are measured in the temperature range from 220 t o 410 K, and a t liquid nitrogen temperature. They are analyzed by a simple deformation potential model. The stress coefficients of energy gap, el and c3, are obtained. The nonlinearity of el for tellurium is restricted to the pressure range smaller than lo6 dyn/cm*. The electron mass as well as the hole mass possibly increase with selenium content.Die Piezowiderstandskoeffizienten von Te, Se,Te,, und Se,,Te,, werden im Temperaturbereich yon 220 bis 410 K und bei 77 K gemessen. Die MeBergebnisse werden mit einem Deformationspotentialmodell analysiert. Die Spannungskoeffizienten der Energielucke, E, und eat werden erhalten. I n einem Spannungsbereich kleiner als los dyn/cm2 tritt eine Anderung des Koeffizienten F, des Tellurs auf. Die Elektronenmasse sowie die Lochermasse nehmen moglicherweise mit dem Selengehalt zu.

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“…In this Section, we use Eqs. (33), (38), and (40) to calculate the KME in tellurium. We consider the magnetization response to a transport current along the optical (z) axis of a tellurium crystal.…”

Section: B Kinetic Magnetoelectric Effectmentioning

confidence: 99%

“…Combining Eqs. (33), (38), and (40) with the expression for the KME response coefficient, Eq. (44), we obtain the intrinsic (α int zz ), skew-scattering (α sk zz ), and side-jump (α sj zz ) contributions the KME, which originate from the corresponding magnetic moments.…”

Section: B Kinetic Magnetoelectric Effectmentioning

confidence: 99%

Pancharatnam-Berry phase and kinetic magnetoelectric effect in trigonal tellurium

Şahin

Rou

et al. 2018

Phys. Rev. B

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We study the kinetic magnetoelectric effect (current-induced magnetization including both the orbital and spin contributions) in three-dimensional conductors, specializing to the case of p-doped trigonal tellurium. We include both intrinsic and extrinsic contributions to the effect, which stem from the band structure of the crystal, and from disorder scattering, respectively. Specifically, we determine the dependence of the kinetic magnetoelectric response on the hole doping in tellurium, and show that the intrinsic and extrinsic effects dominate for low and high levels of doping, respectively. The results of this work imply that three-dimensional helical metals are promising for spintronics applications, in particular, they can provide robust control over current-induced magnetic torques.In this Section we summarize the current state of the KME theory in semimetals and doped semiconductors. arXiv:1712.06586v1 [cond-mat.mes-hall]

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Conduction Band Structure of Tellurium

Cited by 52 publications

References 17 publications

Elemental tellurium as a chiralp-type thermoelectric material

Elemental tellurium as a chiralp-type thermoelectric material

Piezoresistance of tellurium and selenium–tellurium mixed crystals

Pancharatnam-Berry phase and kinetic magnetoelectric effect in trigonal tellurium

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