Conduction band splitting and transport properties of Bi2Se3

Navrátil, J.; Horák, J.; Plechäček, T.; Kamba, S.; Lošťák, P.; Dyck, Jeffrey S.; Chen, W.; Uher, Ctirad

doi:10.1016/j.jssc.2003.12.031

Cited by 129 publications

(117 citation statements)

References 22 publications

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“…Bi 2 Se 3 ordinarily forms n-type specimens, so that more literature on n-type is available. Typical n-type mobilities at or even somewhat above these concentrations [35][36][37][38][39][40][41] are in this range or higher, so that assuming no great asymmetry in n-type vs p-type scattering rates, the assumed p-type mobilities are reasonable. The assumed carrier concentration dependence implies that mobility increases significantly as carrier concentration decreases, which is generally true until one reaches a limiting value, as in Ref.…”

Section: Calculation Of Optimal Doping Ranges and Potential Perfomentioning

confidence: 96%

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

Parker

Singh

2011

Phys. Rev. X

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We present an analysis of the potential thermoelectric performance of hole-doped Bi 2 Se 3 , which is commonly considered to show inferior room temperature performance when compared to (2008).]) the material may show optimized ZT values of unity or more in the 300-500 K temperature range and thus be suitable for cooling and moderate temperature waste heat recovery and thermoelectric solar cell applications. Central to this conclusion are the larger band gap and the relatively heavier valence bands of Bi 2 Se 3 .

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Section: Calculation Of Optimal Doping Ranges and Potential Perfomentioning

confidence: 96%

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

Parker

Singh

2011

Phys. Rev. X

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“…Bi 2 Se 3 is one of the binary end-members of the (Bi,Sb) 2 (Te,Se) 3 family of thermoelectric materials. Decades of work in the chemistry, physics, and processing of these materials has led to complex formulations of compounds and microstructures optimized for use as thermoelectrics under various conditions (see e.g.…”

Section: Introductionmentioning

confidence: 99%

“…One of the major issues for Bi 2 Se 3 -based thermoelectrics has been the difficulty in making the material p-type. Unlike Bi 2 Te 3 , which can simply be made n-or p-type through variation of the Bi:Te ratio, the defect chemistry in Bi 2 Se 3 is dominated by charged selenium vacancies, which act as electron donors [3], resulting in n-type behavior for virtually all of the reported transport studies (see e.g. refs.…”

Section: Introductionmentioning

confidence: 99%

“…refs. [3][4][5][6][7][8][9][10][11]. p-type behavior for pure Bi 2 Se 3 was reported in an early study [9], but never since.…”

Section: Introductionmentioning

confidence: 99%

“…p-type behavior for pure Bi 2 Se 3 was reported in an early study [9], but never since. Modern studies have shown that p-type behavior is possible when beginning with an n-type host material in the (Bi 2-x Sb x )Se 3 solid solution with x = 0.4, and then doping that composition with small amounts of Pb to create a quaternary p-type material [10].…”

Section: Introductionmentioning

confidence: 99%

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p-typeBi2Se3for topological insulator and low-temperature thermoelectric applications

et al. 2009

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The growth and elementary properties of p-type Bi 2 Se 3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi 2 Se 3 , the p-type behavior has been induced through low level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi 1.98 Ca 0.02 Se 3 relative to the n-type material. p-type single crystals with ab plane Seebeck coefficients of +180 µV/K at room temperature are reported. These crystals show a giant anomalous peak in the Seebeck coefficient at low temperatures, reaching +120 µVK -1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p-type Bi 2 Se 3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.2

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Complex Band Structures and Lattice Dynamics of Bi₂Te₃‐Based Compounds and Solid Solutions

Fang

et al. 2019

Adv Funct Materials

153

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Bi 2 Te 3 -based compounds and derivatives are milestone materials in the fields of thermoelectrics (TEs) and topological insulators (TIs). They have highly complex band structures and interesting lattice dynamics, which are favorable for high TE performance as well as strong spin orbit and band inversion underlying topological physics. This review presents rational calculations of properties related to TEs and provides theoretical guidance for improving the TE performance of Bi 2 Te 3 -based materials. Although the band structures of these TE materials have been studied theoretically and experimentally for many years, there remain many controversies on band characteristics, especially the locations of band extrema and the exact values of bandgaps. Here, the key factors in the theoretical investigations of Bi 2 Te 3 , Bi 2 Se 3 , Sb 2 Te 3 , and their solid solutions are reviewed. The phonon spectra and lattice thermal conductivities of Bi 2 Te 3 -based materials are discussed. Electronic and phonon structures and TE transport calculations are discussed and reported in the context of better establishing computational parameters for these V 2 VI 3 -based materials. This review provides a useful guidance for analyzing and improving TE performance of Bi 2 Te 3 -based materials.nologies, including cooling and power generation. [1] They have been attracting increased attention in the last decade as a promising potential solution for harvesting waste heat to produce useful electrical power. The key challenge is to improve the efficiency of TE energy conversion, which is determined by the dimensionless figure of merit zT = S 2 σT/(κ e + κ L ), where S, σ, T, κ e , and κ L are the Seebeck coefficient, electrical conductivity, absolute temperature, and the electronic and lattice components of total thermal conductivity κ, respectively. [2] In order to improve zT, one can increase the numerator S 2 σ, which is also called power factor, and decrease the denominator κ. However, the tradeoff among the three properties makes it difficult to realize a high zT. [3] Since all three properties (S, σ, κ e ) are carrier concentration dependent, optimizations of the carrier concentration are needed for maximizing zT. [4] It is often convenient to evaluate TE materials through several empirical parameters, which can be combined into a term called the quality factor B ∼ N v /m I *κ L , [5] where N v is the band degeneracy and m I * is the inertial mass (m I * is equal to the band effective mass m b * for an isotropic single band). This suggests that high N v with low m b * and low κ L are beneficial for TE performance. However, materials such as Bi 2 Te 3 -based alloys, with the highest known roomtemperature TE performance, have complex band structures that are not well described in effective mass models. More sophisticated treatments involving the actual electronic structure are imperative.Since the discovery of the Seebeck effect, a rapid progress in TEs has been made in the 1950s and 1960s, when the classic TE materials Bi 2 Te 3 , ...

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Conduction band splitting and transport properties of Bi2Se3

Cited by 129 publications

References 22 publications

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

p-typeBi2Se3for topological insulator and low-temperature thermoelectric applications

Complex Band Structures and Lattice Dynamics of Bi₂Te₃‐Based Compounds and Solid Solutions

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Conduction band splitting and transport properties of Bi2Se3

Cited by 129 publications

References 22 publications

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

Potential Thermoelectric Performance from Optimization of Hole-DopedBi2Se3

p-typeBi2Se3for topological insulator and low-temperature thermoelectric applications

Complex Band Structures and Lattice Dynamics of Bi2Te3‐Based Compounds and Solid Solutions

Contact Info

Product

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Complex Band Structures and Lattice Dynamics of Bi₂Te₃‐Based Compounds and Solid Solutions