Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer

Abstract

Stacking monolayer semiconductors creates moireṕ atterns, leading to correlated and topological electronic phenomena, but measurements of the electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiréheterobilayers of WS 2 /WSe 2 using submicrometer angle-resolved photoemission spectroscopy with electrostatic gating. We find that at all twist angles the conduction band edge is the K-point valley of the WS 2 , with a band gap of 1.58 ± 0.03 eV. From the resolved conduction band dispersion, we deduce an effective mass of 0.15 ± 0.02 m e . Additionally, we observe replicas of the conduction band displaced by reciprocal lattice vectors of the moirésuperlattice. We argue that the replicas result from the moirépotential modifying the conduction band states rather than final-state diffraction. Interestingly, the replicas display an intensity pattern with reduced 3-fold symmetry, which we show implicates the pseudo vector potential associated with in-plane strain in moiréband formation.