Conduction band fluctuation scattering due to alloy clustering in barrier layers in InAlN/GaN heterostructures

Li, Qun; Chen, Qian; Chong, Jing

doi:10.1063/1.5003195

Cited by 4 publications

(2 citation statements)

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“…Polar optical phonon (POP) scattering is the dominant scattering mechanism in 2DEG in GaN‐based heterostructures at temperatures above 200 K. [ 6,7 ] Only the phonons around the Brillouin‐zone center contribute to electron scattering to satisfy momentum conservation. These phonons have a constant energy of

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Section: Introductionmentioning

confidence: 99%

“…[3,4] The higher 2DEG density of InAlN/GaN heterostructures allows HEMT devices to achieve higher output power, however, it may also result in the migration of more electrons from the lowest subband to higher subbands. SdH lowtemperature measurements of InAlN/GaN heterostructures have demonstrated that the 2DEG density of subband 2 exceeds 5% of the total 2DEG density at 0.28 K. [5] As the temperature increases, the proportion of electrons occupying higher subbands steadily increases.Polar optical phonon (POP) scattering is the dominant scattering mechanism in 2DEG in GaN-based heterostructures at temperatures above 200 K. [6,7] Only the phonons around the Brillouin-zone center contribute to electron scattering to satisfy momentum conservation. These phonons have a constant energy of ℏω 0 ¼ 91.2 meV, [8] which is within the same order of magnitude as the electron energy.…”

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confidence: 99%

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Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures

Zhang

et al. 2023

Physica Rapid Research Ltrs

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The high density of two‐dimensional electron gas (2DEG) in InAlN/AlN/GaN heterostructures results in significant occupation of higher subbands, it is thus imperative to consider multi‐subband occupation and inter‐subband scattering in the calculations of polar optical phonon (POP) scattering. The physical parameters, such as subband energies, wave functions of the four lowest subbands, and Fermi level of InAlN/AlN/GaN heterostructures, are calculated by solving the Schrödinger‐Poisson equations and applied to the multi‐subband POP scattering model. The dependence of mobility, which is limited by multi‐subband POP scattering, on temperature and 2DEG density is studied. The results show that multi‐subband occupation and inter‐subband scattering play important roles in electron transport. The higher subbands contribute 26% to room‐temperature electron mobility. Two simplified POP scattering models, which either ignore multi‐subband occupation or simplify the in‐scattering processes are evaluated. The results show that both simplified models introduce significant deviations in the mobilities that are limited by POP scattering. The relative magnitudes of mobility in each subband depend on the energy dependence of momentum relaxation time and the energy distribution of each subband.This article is protected by copyright. All rights reserved.

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