Conduction at a Ferroelectric Interface

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier

“…We find that the effective tunneling barrier width is therefore reduced by about two unit cells with polarization pointing into n-SrTiO 3 . Recent experimental and theoretical studies have also found this kind of interfacial electronic reconstruction in ferroelectric oxides [17][18][19].…”

Polarization-controlled modulation doping of a ferroelectric from first principles

“…3 we present plots of the spatial dependence of the density of states near the Fermi level, analogous to those presented in Ref. [11]. When the polarization points away from the BaTiO 3 /n-SrTiO 3 interface, the density of states near the Fermi level in the first three layers of n-SrTiO 3 is dramatically reduced.…”

“…1(c)]. The analysis of observed changes of conductance driven by ferroelectric polarization switching at a ferroelectric-complex oxide interface PbZr 0.2 Ti 0.8 O 3 /LaNiO 3 [11] showed that a new conducting channel opened in the interface PbO layer for polarization pointing into the interface, with the bands in this layer shifting about 1.7 eV with the change in polarization state. First-principles investigation of the tunneling electroresistance perpendicular to the interface in a SrRuO 3 /BaTiO 3 /n-SrTiO 3 heterostructure operated as a ferroelectric tunnel junction showing metallization of two layers of BaTiO 3 at the BaTiO 3 /n-SrTiO 3 interface [12].…”

Interfacial Charge Engineering in Ferroelectric‐Controlled Mott Transistors

“…Previous efforts to enhance the ferroelectric field effect in strongly correlated oxides involve either working with channel materials with intrinsically lower carrier density (10 19 –10 20 cm −3 ), or manipulating the channel mobility via thickness control or strain modulation . While the former approach does not have distinct advantage in size scaling over doped semiconductors, the latter significantly suppresses the mobility of the entire channel, thus compromising the operating speed and power of the device.…”