Conduction and dielectric behaviour of SiC nano-sized materials

Kassiba, A.; Tabellout, M.; Charpentier, Sylvain; Herlin, N.; Eméry, J.

doi:10.1016/s0038-1098(00)00195-2

Cited by 43 publications

(23 citation statements)

References 16 publications

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“…1 Owing to the high strength, high elastic modulus, low density, high thermal, and chemical stability of silicon carbide ͑SiC͒, microsized and nanosized SiC have been useful material for improving mechanical and thermal properties of nanocomposite materials. 6 Owing to the exceptional wide band-gap properties of SiC, 7 nanocrystalline SiC is also a technologically important material for the realization of nanoelectronics, nanophotonics, and electronic devices designed to operate at high temperature and high frequency. 6 Owing to the exceptional wide band-gap properties of SiC, 7 nanocrystalline SiC is also a technologically important material for the realization of nanoelectronics, nanophotonics, and electronic devices designed to operate at high temperature and high frequency.…”

Section: Introductionmentioning

confidence: 99%

Effect of chemical vapor deposition energy sources on the structure of SiC prepared by carbon nanotubes-confined reaction

Shajahan

Nahm

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Structure and photoluminescence features of nanocrystalline Si / SiO 2 films produced by plasma chemical vapor deposition and post-treatment J.Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition Silicon carbide ͑SiC͒ nanorods and microcrystals were synthesized with controlled structure through a two-step reaction scheme. Carbon nanotubes ͑CNTs͒ were first grown by the thermal decomposition of C 2 H 2 over a Fe/Co metal catalyst loaded on a Si͑100͒ wafer surface. The grown CNTs were then reacted with tetramethylsilane ͑TMS͒ to form ␤-SiC nanorods or microcrystals. SiC nanorods were observed when CNTs reacted with TMS at 1100°C in an IR-induced heating chemical vapor deposition ͑CVD͒ reactor, whereas SiC microcrystals were formed at 1250°C in an rf-induced-heating CVD reactor. Higher temperature and longer time were favorable for the growth of good quality SiC crystals. The blueshift of the PL spectra was observed from the SiC nanorods and SiC microcrystals. The structural change of CNTs in the growth was discussed in this work.

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Section: Introductionmentioning

confidence: 99%

Effect of chemical vapor deposition energy sources on the structure of SiC prepared by carbon nanotubes-confined reaction

Shajahan

Nahm

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The decreasing nature of ec throughout the measuring frequency range depicts that the polarization of charge carriers did not follow the applied a.c. field. In this semiconductor, the majority carriers for the polarization are either electrons or holes [17]. The pristine sample has been found to have the intrinsic charge carriers as electrons studied using Hall measurements.…”

Section: Resultsmentioning

confidence: 99%

Low temperature dielectric study on swift heavy ion irradiated 6H-SiC crystals

Viswanathan

Murugaraj

Lee

et al. 2011

Trans Indian Inst Met

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The effect of 150 MeV Ag 12+ ion irradiation on the electrical behavior of 6H-SiC crystals has been studied by impedance spectroscopy. The study was carried out on the pristine, 8 ´ 10 12 ions/cm 2 and irradiated at 300 K and 80 K respectively. The present study elucidates the divergence of defect introduction due to irradiation at different temperatures through the electric polarizability and conductivity. The frequency and temperature dependent dielectric dispersions observed for the sample irradiated with 8 × 10 12 ions/cm 2 at 300 K are observed to be more than those of the sample irradiated at 80 K. The study reflects that more defects are produced in the case of 8 × 10 12 ions/cm 2 at 300 K irradiated sample than the sample irradiated with 8 × 10 12 ions/cm 2 at 80 K. The ac conductivity measured at 1 kHz over a temperature range from 100 -300 K showed that complex defects are produced at 300 K for the swift heavy ion irradiated samples.

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“…This wide bandgap biocompatible [26] material was recently shown to exhibit blue/yellow photoluminescence in nanoscale structures [27]. The SiC nanoparticles are characterized by versatile properties such as dielectric behavior marked by interfacial polarizations [28][29][30] as well as the vibrational and luminescence properties which point out the main role of surface nature [3,4].…”

Section: Silicon Carbide Nanostructures Versusmentioning

confidence: 99%

Diverse Role of Silicon Carbide in the Domain of Nanomaterials

Sahu

Ghosh

Pradhan

et al. 2012

International Journal of Electrochemistry

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Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. Despite being an indirect band gap semiconductor, SiC is used in several highperformance electronic and optical devices. SiC has been long recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and biomedical devices. In this paper, diverse role of SiC in its nanostructured form has been discussed. It is felt that further experimental and theoretical work would help to better understanding of the various properties of these nanostructures in order to realize their full potentials.

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Conduction and dielectric behaviour of SiC nano-sized materials

Cited by 43 publications

References 16 publications

Effect of chemical vapor deposition energy sources on the structure of SiC prepared by carbon nanotubes-confined reaction

Effect of chemical vapor deposition energy sources on the structure of SiC prepared by carbon nanotubes-confined reaction

Low temperature dielectric study on swift heavy ion irradiated 6H-SiC crystals

Diverse Role of Silicon Carbide in the Domain of Nanomaterials

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