Conducting wires embedded in an i-GaAs matrix for electronic applications

Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As οn InP Substrate

“…This fact is conrmed by the logarithmic dependence of the photoconductivity relaxation on time in the initial time interval ∆σ = σ(0)− σ(t) = A ln(1 + t/τ ) [4,5] with the value of τ in the range 2030 s. Relaxation and tting of conductivity for sample 2 is shown in Fig. 3b.…”

Sn delta-doping in GaAs

“…The quantum mobility is limited by the scattering at ionised Sn impurities [18][19][20]. Following Ref.…”

“…Following Ref. [18][19][20] we have calculated the quantum mobility, µ q calc , including multiple subband scattering. The screening of the Coulomb scattering potential was taken into account within the random-phase approximation [19].…”

“…For samples N1 and N2 the agreement between µ q calc and µ q SdH is quite good. Next we present the band diagrams, wave functions and for each subband the electron concentration, that we have calculated by solving self-consistently the Schrödinger and Poisson equations [18]. The non-parabolicity of the conduction band [21] in the Γ-point and the exchange-correlation contribution [22] to the electrostatic potential were included in the calculations.…”

“…Next a Sn layer was deposited in the presence of an arsenic flux at a substrate temperature of ~ 450 °C. Subsequently, a layer of i-GaAs (d= 40 nm) was grown, followed by a contact layer (d= 20 nm) of n-GaAs, with a Si concentration of 1.5x10 18 cm -3 , in order to suppress surface depletion. Several wavers (labelled N1-N7) with design Sn densities, n D, ranging from 3.0x10 12 to 2.7x10 14 cm -2 were grown (see Table I).…”