Conducting and switching characteristics of SiO films with Al and Ag electrodes

Manhart, S.

doi:10.1016/0022-3093(73)90018-5

Cited by 16 publications

(1 citation statement)

References 15 publications

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“…In relation to the latter, switching has generally been studied using a measuring circuit in which a resistor is in series with the supply voltage. (Park and Besavaiah 1970, Manhart 1973, Rakhshani and Hogarth 1978, Patel and Patel 1984. The reason for this is to limit the circulating current I,, and thus prevent the device from being permanently damaged.…”

Section: Introductionmentioning

confidence: 97%

The effect of series resistance on the current/voltage characteristics of metal-cermet-metal sandwich structures

Beynon

1985

International Journal of Electronics

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Variation of the circulating current with potential difference has been studied in evaporated AI-Cu/SiO-AI sandwich structures, 200nm thick containing IOwt% Cu. The effect of a series resistor in the measuring circuit has been studied in detail. Low-voltage switching, low-voltage narrow-peak current pulses, bistable high-voltage switching and self-sustained oscillations in the circulating current have been obtained using different values of the series resistor. The results are explained through an analysis of the DC load line of the measuring circuit. In the absence of a series resistor, the current/voltage characteristic exhibits threshold, negative resistance and memory and the current is time-dependent.

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Section: Introductionmentioning

confidence: 97%

The effect of series resistance on the current/voltage characteristics of metal-cermet-metal sandwich structures

Beynon

1985

International Journal of Electronics

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Electron Spin Resonance Measurements and Electrical Characteristics, before and after Electroforming, of Thin Films of SiO/Nb205 and Nb205

Al-Ismail

Arshak

Hogarth

1985

phys. stat. sol. (a)

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The electrical conduction in Cu-SiO/Nb,O,-Cu and Cu-Kb,O,-Cu thin film structures is investigated. Two distinct types of conduction mechanisms are observed in unformed devices, (i) spacecharge-limited current flow a t room temperature in films having compositions between 40 and 100% Nb,O, together with SiO and (ii) a Poole-Frenkel process in films having compositions between 30 to 5% Nb,O, together with SiO. This latter process is the dominant one in the temperature range 223 to 368 K for typical films of 70% Si0/30% Kb,O,. The activation energy is estimated to be 0.4 eV and the carrier mobility of the order of 3 to 4 X om2 V-l s-l. The compositional studies of these films are consistent with the variations in spin density determined from the resonance measurements. The formed devices displayed voltage-controlled negative resistance and a significant electron emission current. The forming voltage is found to be systematically dependent on the content of Nb,O, in SiO. l h e variation of the characteristics formed with the composition shows a shift in the peak voltage and peak current. The highest peak current is obtained a t 70% SiO/30yO Nb,O, thin film composition. Electron diffraction patterns confirm the amorphous nature of the Nb,O, films. La conductibilitk klectrique des couches minces pr6parkes en forme de sandwich Cu-SiO/Nb,O,-Cu et de Cu-Nb,O,-Cu est dkterminke. Deux types de mkcanisme de conduction sont distinguks dans les kchantillons avant le processus d'6lectroformation, (i) courant limit6 par charge d'espace A 290 K pour les couches minces avec leurs compositions entre 40 e t 100% Nb,O, avec SiO, et (ii) un processus Poole-6renkel pour les couches minces avec leurs compositions entre 30 et 506 Nb,O,. Ce processes est le plus typique pour les couches minces de 70 yo SiO/30 yo hTb,O, ktudikes en d6tail. L'Bnergie #excitation est b peu prlis 0.4 eV et la mobilitk des porteurs de charge est environ 3 A 4 A s-l. Les 6tudes de composition de nos couches sont en accord avec les variations du densitk des spins determinkes par les mesures de resonance mag-n6tique. Les kchantillons, apres la formation klectrique, montrent les caractkristiques de resistance diffkrentielle nkgative et une &mission significante d'klectrons. La tension pour 1'6lectroformation est une fonction du contenu de Nb,O, dans SiO. La variation des caractkristiques apres le processus de formation comme fonction de composition, montre une variation de tension maximum et de courant maximum. Le courant le plus grand est observk pour u n Bchantillon composk de 70% SiO et de 307; Nb,O,. La nature amorphe des couches minces 6tait Btablie par l'examen par diffraction des Blectrons.om2

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Observation and compositional studies of the metallic conducting filaments in the low-resistance state (ON-state) of SiO/V2O5 thin films used as memory elements

Al-Ramadhan

Hogarth

1984

J Mater Sci

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Conducting and switching characteristics of SiO films with Al and Ag electrodes

Cited by 16 publications

References 15 publications

The effect of series resistance on the current/voltage characteristics of metal-cermet-metal sandwich structures

The effect of series resistance on the current/voltage characteristics of metal-cermet-metal sandwich structures

Electron Spin Resonance Measurements and Electrical Characteristics, before and after Electroforming, of Thin Films of SiO/Nb205 and Nb205

Observation and compositional studies of the metallic conducting filaments in the low-resistance state (ON-state) of SiO/V2O5 thin films used as memory elements

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