1980
DOI: 10.1002/pssa.2210580158
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Conductibilité thermique de borures de silicium

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Cited by 15 publications
(3 citation statements)
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“…boron). (6), boron carbides (5), -AlB (6), and boron silicides (8,9) all have large S values and exhibit relatively high performance as a p-type TE material at '800 K. The TE properties of -rh. boron can also be altered by doping metals into interstitial sites.…”
Section: Introductionmentioning
confidence: 99%
“…boron). (6), boron carbides (5), -AlB (6), and boron silicides (8,9) all have large S values and exhibit relatively high performance as a p-type TE material at '800 K. The TE properties of -rh. boron can also be altered by doping metals into interstitial sites.…”
Section: Introductionmentioning
confidence: 99%
“…1,2 Even more importantly, boron-rich compounds have attracted extensive attention for their high melting-points, semi-metallic/ metallic, ascending Seebeck coefficients and electrical conductivities with increasing temperature. [3][4][5] Excellent electrical conductivity combined with weak thermal conductivity contributes to generate good thermoelectric properties in borides. In particular the silicon borides, possessing extremely higher chemical and thermal stabilities, have great potential for thermoelectric materials in extreme conditions (hightemperature, strong chemical corrosion, etc.).…”
Section: Introductionmentioning
confidence: 99%
“…They have moderately high electrical conductivity, anomalously large Seebeck coefficient and low thermal conductivity as have been reported for boron carbide, [1][2][3][4][5][6] α-AlB 12 7, 8) and B 12 Si. 9) Among these boron-rich borides, boron carbide has been most widely studied. Figure 1 illustrates schematic crystal structures of B 4 C and B 6 O. Boron carbide consists of B 12 or B 11 C icosahedrons at the vertices of a rhombohedral unit cell and three-atom chain of CBC or CBB at the center of the rhombohedron.…”
Section: Introductionmentioning
confidence: 99%