1988
DOI: 10.1103/physrevb.37.10125
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Conductance of an array of elastic scatterers: A scattering-matrix approach

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Cited by 132 publications
(95 citation statements)
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“…all expressions in Appendix H hold with P instead of S. In this sense, we will study in Section 5 the classical versus quantum situations (see also [47,48]). …”
Section: The Self-consistency Conditionmentioning
confidence: 99%
See 1 more Smart Citation
“…all expressions in Appendix H hold with P instead of S. In this sense, we will study in Section 5 the classical versus quantum situations (see also [47,48]). …”
Section: The Self-consistency Conditionmentioning
confidence: 99%
“…If T L = T R , then setting µ = eV , where V denotes the electric potential, one obtains 48) where the electric conductance G e is given by…”
Section: Ohm and Fourier Lawsmentioning
confidence: 99%
“…The delta function model is a convenient phenomenological approach to impurity scattering which has been widely used in spinindependent mesoscopic transport theories 25,35 as well as in ferromagnetic systems. 18,20 The spin dependence of scattering in the ferromagnet is determined by the ratio of up and down amplitudes, which we write as ρ = u − /u + .…”
Section: Delta Function Model Of Scatteringmentioning
confidence: 99%
“…The observed electron-wave interference can be understood quantitatively based on a theoretical model shown schematically in Figure 9. In this model based on the multichannel Landauer-Büttiker formalism (59,(61)(62)(63), the nanotube is considered a coherent electron waveguide with two propagating modes, and the electron scattering is modeled by 4 × 4 scattering (S) matrices at each interface, S L and S R . Following previous theoretical studies (52,53), the electron scattering between the two modes inside the nanotube is ignored, and the phase accumulation during electron propagation is represented by a diagonal 4 × 4 matrix, S N .…”
mentioning
confidence: 99%
“…Consequently, electrons in the two propagating modes acquire different phase shifts as they traverse the nanotube, which are represented by the diagonal matrix elements of S N . The phase change as a function of electron energy is responsible for the interference patterns as a function of V and V g in Figures 7 and 8.The overall conductance behavior of a nanotube device can be calculated once the device S matrix S T is obtained from S L , S R , and S N by matrix combination (59,(61)(62)(63). Specifically, in the zero-temperature limit, dI/dV as a function of V and V g in a nanotube device is related to the matrix elements of S T as (30)…”
mentioning
confidence: 99%