Conductance considerations in the reactive ion etching of high aspect ratio features

Coburn, J. W.; Winters, Harold F.

doi:10.1063/1.101937

Cited by 172 publications

(102 citation statements)

References 12 publications

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“…For holes, the supply of neutrals is further impeded by low conductance. 9 At the lowest pressure ͑0.9 mtorr͒, the supply of neutral chlorine is limited for all holes, and the etching is like reactive ion beam etching where both chemical and physical ͑sputtering͒ etching occur. Sidewall scattering results in trenching for the largest holes ͓Fig.…”

Section: Pressurementioning

confidence: 99%

“…8 Even for the one-dimensional trenches, the effects are already strong when the transport of neutral species to the bottom of the hole is governed by Knudsen transport. 9 As a direct consequence, the delicate balance between ion and radical fluxes changes over the etch depth. For the regimes of deeply etched photonic crystals with hole diameters of ϳ200 nm and aspect ratios well above 10, new etching regimes must be explored.…”

mentioning

confidence: 99%

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Comparative study of Cl2, Cl2∕O2, and Cl2∕N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

Carlström

Andriesse

Karouta

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An extensive investigation has been performed on inductively coupled plasma etching of InP. An important motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals. The essential chemistry is based on Cl 2 with the addition of N 2 or O 2 for sidewall passivation. The influence of different process parameters such as gas flows, temperature, pressure, ion energy, and inductively coupled plasma power on the hole geometry is presented. It is concluded that photonic crystals can be etched with Cl 2 only; however, temperature and pressure control is critical. Adding passivation gases largely broadens the window in the parameter space for hole etching. Most importantly, etching of narrow holes can be carried out at higher temperatures where the etching is mass limited and spontaneous etching of InP by Cl 2 occurs.

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Section: Pressurementioning

confidence: 99%

mentioning

confidence: 99%

Comparative study of Cl2, Cl2∕O2, and Cl2∕N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

Carlström

Andriesse

Karouta

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Therefore the molecules are not only scattered diffusely from the sidewall, but additionally from other particles. However, the first process is predominating [62]. The etch process for a single channel is depicted in Fig.…”

Section: Single Straight Channels 13mentioning

confidence: 99%

X-ray waveguide optics

Hoffmann-Urlaub¹

2017

Göttingen Series in X-Ray Physics

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“…However, the polymer deposition, floor polymer removal, and structure release steps must be tested when using different suspended structure thicknesses. Because of the conductance effect [17,18] and the reactant transport effect [19], in the polymer deposition step the width of the trench opening and the trench aspect ratio impacted the fluorocarbon (FC) deposition flux distribution. A larger trench opening or smaller trench aspect ratio resulted in a greater polymer deposition rate at the trench bottom [10].…”

Section: Fabrication Considerationsmentioning

confidence: 99%

Novel Trench Isolation Technology for Suspended MEMS Structures

Wen-Cheng¹

2017

AUSMT

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Abstract:This study presents a parylene-based trench isolation (PBTI) method using standard silicon wafer to obtain a suspended MEMS structure. The silicon-based suspended structures were electrically isolated using supported parylene beams. The parylene beams provide electrical isolation between the suspended structure and substrate, and prevent anchor movement during actuation and wire-bonding. The proposed process is a simple low-temperature, dryetching and reliable fabrication method for structure creation and electrical isolation and does not require wet-release, LPCVD, plasma-enhanced chemical vapor deposition (PECVD), ion implantation, sputtering process, or sandwiched oxide/polysilicon/metal isolation. The parylene beams were created by performing multiple steps of parylene deposition and removal inside a silicon mold. The trench etching, polymer deposition for sidewall protection, floor polymer removal, structure release, and polymer stripping steps were completed by modifying the etching or passivation steps of the Bosch process. These steps can be integrated into a single-run ICP process controlled by macro commands; the ICP etcher can automatically complete suspended structure creation in a single run. A test device with a thickness of 50 m and a maximum trench aspect ratio of 10 was created to demonstrate process feasibility. The proposed process can be used for sensors and actuators, requiring a considerable device thickness to enhance sensitivity and performance. The test device is a comb-drive like device used to check the electrical isolation for sensor and actuator. Design, simulation, and fabrication considerations are discussed.

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Conductance considerations in the reactive ion etching of high aspect ratio features

Abstract: Trilevel reactive ion etching processes for fabrication of 60 nm germanium structures with high aspect ratio Fabrication of deep submicron patterns with high aspect ratio using magnetron reactive ion etching and sidewall process J.

Cited by 172 publications

References 12 publications

Comparative study of Cl2, Cl2∕O2, and Cl2∕N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

Comparative study of Cl2, Cl2∕O2, and Cl2∕N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

X-ray waveguide optics

Novel Trench Isolation Technology for Suspended MEMS Structures

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