Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

Shlimak, I.; Golosov, D. I.; Бутенко, А. В.; Friedland, K.‐J.; Kravchenko, S. V.

doi:10.1002/andp.200910400

Cited by 2 publications

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References 15 publications

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“…17, confirming that τ s is proportional to τ p , as expected for Dyakonov-Perel' mechanism 18 of spin relaxation. The ratio τ s /τ p was measured 17 as 10 6 . Subsequent measurements yielded τ s /τ p ∼ 3 × 10 5 for Si/Si-Ge quantum wells 19 and τ s /τ p ∼ 2 × 10 5 for a Si-MOSFET (Ref.…”

Section: Experimental Results and Basic Interpretation: An Overviewmentioning

confidence: 99%

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

et al. 2013

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We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n 1 and n 2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in technique, while maintaining a large dc current through the source-drain channel. We find that in a parallel magnetic field, the resistance of the sample R(I dc ) is asymmetric with respect to the direction of the dc current. The asymmetry becomes stronger with an increase of either the magnetic field or the difference between n 1 and n 2 . These observations are interpreted in terms of the effective spin injection: the degree of spin polarization is different in the two parts of the sample, implying different magnitudes of spin current away from the slot. The carriers thus leave the excess spin (of the appropriate sign) in the region around the slot, leading to spin accumulation (or depletion) and to the spin-drift-diffusion phenomena. Due to the positive magnetoresistance of the two-dimensional electron gas, this change in a local magnetization affects the resistivity near the slot and the measured net resistance, giving rise to an asymmetric contribution. We further observe that the value of R(I dc ) saturates at large I dc ; we suggest that this is due to electron tunneling from the two-dimensional n-type layer into the p-type silicon (or into another "spin reservoir") at the slot.

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Section: Experimental Results and Basic Interpretation: An Overviewmentioning

confidence: 99%

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

et al. 2013

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“…-We measure the resistivity of a Si MOSFET sample in a magnetic field parallel to the surface and directed along the current. The slot-gate sample was similar to those described in our previous publications [17,18]. The electron density was controlled by the gate voltage V G : n = 1.24 • 10 11 cm −2 (V G − 0.34V).…”

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Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities

Shlimak¹,

Бутенко²,

Golosov³

et al. 2012

EPL

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PACS 72.25.Dc -Spin-polarized transport in semiconductors PACS 73.40.Qv -Metal-insulator-semiconductor structures PACS 71.30.+h -Metal-insulator transitions and other electronic transition= s Abstract -Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n ≫ nc where nc is the critical density of the metalinsulator transition (MIT). It turns out that the normalized PMR curves, R(B)/R(0), merge together when the field is scaled according to B/Bc(n) where Bc is the field in which electrons become fully spin polarized. The values of Bc have been calculated from the simple equality between the Zeeman splitting energy and the Fermi energy taking into account the experimentally measured dependence of the spin susceptibility on the electron density. This extends the range of validity of the scaling all the way to a deeply metallic regime far away from MIT. The subsequent analysis of PMR for low n nc demonstrated that the merging of the initial parts of curves can bee achieved only with taking into account the temperature dependence of Bc. It is also shown that the shape of the PMR curves at strong magnetic fields is affected by a crossover from a purely two-dimensional (2D) electron transport to a regime where out-of-plane carrier motion becomes important (quasi-three-dimensional regime). p-5

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Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

Cited by 2 publications

References 15 publications

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities

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