Condition Monitoring Power Module Solder Fatigue Using Inverter Harmonic Identification

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

“…Furthermore, oscillations in the drainsource voltage resulting from source inductance are transmitted back to the gate voltage characteristics through the Miller capacitance [15], hence, monitoring the gate transient as a TSEP is complicated. In [16], harmonic analysis of an IGBT converter output is used as a TSEP whereas in [17,18] the temperature dependency of the gate current in MOSFETs and IGBTs has been used as a TSEP for condition monitoring with promising results demonstrated. In the case of Si MOSFETs, the switching rate during turn ON was evaluated as a TSEP in [19], and the characteristics of SiC MOSFETs [20][21][22] suggest that the dynamic properties of SiC during turn ON can be a suitable TSEP.…”

Review of Power Semiconductor Device Reliability for Power Converters

“…Therefore, the IGBT internal temperature fluctuations and the unmatched CTE (thermal expansion coefficient) of different materials leading to alternating thermal and electrical stress, is the root cause of ageing failure. Research shows that the fast power cycling (time period is tens of seconds) and higher temperature swing (ΔT > 100 K) leads to wirebond failure, while the slow power cycling (time periodis several minutes) and lower temperature swing (ΔT < 80 K) leads to solder fatigue related failures [9].…”

“…In these fields, the power will fluctuate in a large range [6]- [8], the reliability of power electronic systems with the harsh operating conditions are far less than traditional power equipment. Power semiconductor devices are the core component of power electronic system, and it is also one of the most fragile components in power electronic system [9], so that power device has a significant effect on the reliability of the power electronics system.Thereby, improving the reliability of power devices is one of the focus of power electronics studies. At present, the research on the reliability of power devices mainly includes failure mechanisms, condition monitoring, life estimation and active thermal control etc.…”

A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module

“…Selection of the approach to reliability design and condition monitoring for electronic products has been an evolutionary process [9]. At present, nondestructive testing techniques are reported in use such as scanning acoustic tomography [11] and active thermography [12].Some thermal or electrical parameters are also adopted to monitor the degradation of power modules, and this method mainly concentrates on the surface response [13], or the transient electric parameters which are internal-failure-sensitive parameters [14][15][16][17][18]. Ref.…”

“…Ref. [14] presented a method to evaluate solder fatigue in a voltage source inverter IGBT module by detecting its output harmonic, of which the low-order harmonics are affected by the junction temperature. Ref.…”