Condenson-related thermoelectric properties and formation of coherent nanoinclusions in Te-substituted In4Se3 compounds

Jeong, Mahn; Lim, Young Soo; Seo, Won Seon; Lee, Jong Heun; Park, Cheol Hee; Sznajder, M.; Kharkhalis, L. Yu.; Bercha, D. M.; Yang, Jihui

doi:10.1039/c3ta12408h

Cited by 5 publications

(7 citation statements)

References 18 publications

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“…Since there is a possibility to change these parameters and also the intensity of the electron-phonon interaction by means of the external factors (pressure or impurities) [20,22,23], the possibility of the controlled solitary wave's propagation (different width, shape, and height) occurs. It discovers the new perspective applications for the In4Se3 crystal, for instance, in the nonlinear optics.…”

Section: Resultsmentioning

confidence: 99%

“…The condition for the condenson states is fulfilled in 3D-In4Se3 crystal due to its peculiar dispersion law for charge carries, which contains the second and fourth order components of the wave vectors, and to the peak-like density of electron states [11]. In the first time, the concept of condenson states in the three-dimensional In4Se3 crystal was used for the explanation of the high thermoelectric performance [22,23], which appeared to be larger than 1.4 at 705 K [18]. Experimental investigations of the charge and thermic transport suggest the existence of the condenson states in the In4Se3 layered crystal [22,23].…”

Section: Introductionmentioning

confidence: 99%

“…In the first time, the concept of condenson states in the three-dimensional In4Se3 crystal was used for the explanation of the high thermoelectric performance [22,23], which appeared to be larger than 1.4 at 705 K [18]. Experimental investigations of the charge and thermic transport suggest the existence of the condenson states in the In4Se3 layered crystal [22,23].…”

Section: Introductionmentioning

confidence: 99%

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Peculiarities of soliton excitations in the In4Se3 crystal

Kharkhalis¹,

Korolevych²

2018

Sci.Herald.Uzh.Univ.Ser.Phys

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We present new investigations of the spatially localized excitations of soliton type in the framework of the nonlinear Schrodinger equation. It is shown that the fourthorder effects are crucial for the formation of solitary waves in the layered In4Se3 crystal. The balance between the higher order dispersive terms and nonlinearity, induced by lattice deformation, may lead to the different spatial localized excitations. They can be stable or unstable depending on the parameters of the dispersion law and the wave vector region. It is found that one-soliton and multisoliton solutions can be realized in the In4Se3 crystal. The parameters of soliton excitations (energy, amplitude, velocity) have been determined. The time evolution of soliton was investigated too.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Peculiarities of soliton excitations in the In4Se3 crystal

Kharkhalis¹,

Korolevych²

2018

Sci.Herald.Uzh.Univ.Ser.Phys

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“…However, most cation dopants substituting at the In2/In3 sites, such as Zn, Ga, and Sn, increase both the lattice and total κ because of the breaking of the Peierls distortion in the In/Se chains, which plays a much more important role in the decrease in the lattice thermal conductivity than the point defects. In comparison, the anion dopants or Se vacancies influence the Peierls distortion indistinctly; thus, the κ is maintained at a value similar to those of the single crystals, such as In 4 Se 2.7 Cl 0.03 (κ = 0.6 W/mK) and In 4 (Se 0.95 Te 0.05 ) 2.9 (κ = ∼0.42 W/mK) …”

Section: Polycrystalline In4se3-based Materials and Their Thermoelect...mentioning

confidence: 96%

“…Nanoinclusions can effectively scatter the medium wavelength (nanoscale) phonons, resulting in a decrease in lattice thermal conductivity. , The nanoinclusions found in In 4 Se 3 -based materials are mostly spheres with sizes of 5–100 nm, such as In nanoparticles, ,, In-rich composites, and Cu nanoparticles. ,, Only those species smaller than 30 nm can effectively scatter the phonons and decrease the κ . Pb and Cu are exceptions: they markedly increase the electronic thermal conductivity by 1 order of magnitude and thus slightly increase the κ as well. , Although most of the heat is carried by the short and medium wavelength phonons, some long wavelength phonons also carry heat .…”

Section: Polycrystalline In4se3-based Materials and Their Thermoelect...mentioning

confidence: 99%

High Thermoelectric Performance of In₄Se₃-Based Materials and the Influencing Factors

et al. 2018

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Materials that can directly convert electricity into heat, i.e., thermoelectric materials, have attracted renewed attention globally for sustainable energy applications. As one of the state-of-the-art thermoelectric materials, InSe features an interesting crystal structure of quasi-two-dimensional sheets comprising In/Se chains that provide a platform to achieve a Peierls distortion and support a charge density wave instability. Single-crystal InSe (δ = 0.65) shows strong anisotropy in its thermoelectric properties with a very high ZT of 1.48 at 705 K in the b-c plane (one of the highest values for an n-type thermoelectric material to date) but a much lower ZT of approximately 0.5 in the a-b plane. Because of the random dispersion of grains and the grain boundary effect, the electrical transport properties of polycrystalline InSe are poor, which is the main impediment to improve their performance. The In4-site in the InSe unit cell is substitutional for dopants such as Pb, which increases the carrier concentration by 2 orders of magnitude and the electrical conductivity to 143 S/cm. Furthermore, the electrical conductivity markedly increases to approximately 160 S/cm when Cu is doped into the interstitial site but remains as low as 30 S/cm with In1/In2/In3-site dopants, e.g., Ni, Zn, Ga, and Sn. In particular, the In4-site dopant ytterbium introduces a pinning level that highly localizes the charge carriers; thus, the electrical conductivity is maintained within an order of magnitude of 30 S/cm. Meanwhile, ytterbium also creates resonance states around the Fermi level that increase the Seebeck coefficient to -350 μV/K, the highest value at the ZT peak. However, the maximum solubility of the dopant may be limited by the Se-vacancy concentration. In addition, a Se vacancy also destroys the regular lattice vibrations and weakens phonon transport. Finally, nanoinclusions can effectively scatter the middle wavelength phonons, resulting in a decrease in the lattice thermal conductivity. Because of the multiple-dopant strategy, polycrystalline materials are competitive with single crystals regarding ZT values; for instance, Pb/Sn-co-doped InPbSnSe has ZT = 1.4 at 733 K, whereas InSe(CuI) has ZT = 1.34 at 723 K. These properties illustrate the promise of polycrystalline InSe-based materials for various applications. Finally, the ZT values of all single crystalline and polycrystalline InSe materials have been summarized as a function of the doping strategy applied at the different lattice sites. Additionally, the correlations between the electrical conductivity and the Seebeck coefficient of all the polycrystalline materials are presented. These insights may provide new ideas in the search for and selection of new thermoelectric compounds in the In/Se and related In/Te, Sn/Se, and Sn/Te systems.

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Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

Han

Chen

Drennan

et al. 2014

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224

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Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this Review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices.

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Condenson-related thermoelectric properties and formation of coherent nanoinclusions in Te-substituted In4Se3 compounds

Cited by 5 publications

References 18 publications

Peculiarities of soliton excitations in the In<sub>4</sub>Se<sub>3</sub> crystal

Peculiarities of soliton excitations in the In<sub>4</sub>Se<sub>3</sub> crystal

High Thermoelectric Performance of In₄Se₃-Based Materials and the Influencing Factors

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

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Condenson-related thermoelectric properties and formation of coherent nanoinclusions in Te-substituted In4Se3 compounds

Cited by 5 publications

References 18 publications

Peculiarities of soliton excitations in the In<sub>4</sub>Se<sub>3</sub> crystal

Peculiarities of soliton excitations in the In<sub>4</sub>Se<sub>3</sub> crystal

High Thermoelectric Performance of In4Se3-Based Materials and the Influencing Factors

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

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Product

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High Thermoelectric Performance of In₄Se₃-Based Materials and the Influencing Factors