Condensation of bombarding gallium ions on a silicon surface

Ishitani, Tohru; Shimase, Akira; Tamura, Hiroshi

doi:10.1063/1.92827

Cited by 19 publications

(4 citation statements)

References 6 publications

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“…On the contrary, the contours of the wire become more irregular. As was expected, Ga condensed into nanodroplets dispersed on the surface [8]. The first precursors of condensed Ga were observed already at a fluence of 9.2 × 10 14 cm −2 .…”

Section: Resultssupporting

confidence: 74%

Ion beam processing of Au nanowires

Tuboltsev¹,

Räisänen²

2009

Nanotechnology

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In nanoelectronics a nanowire forms an elemental building block enabling a charge transfer in complex nanostructures. Ion beam etching has been applied for downsizing of prefabricated Au nanowires in the sub-50 nm linewidth regime, aiming at achieving effective cross sections of less than 10 nm. Low energy Ar+ and Ga+ ions were employed for dry ion beam etching of Au nanowires. Nanometer-precise gradual downsizing to an effective diameter as small as 9 nm has been achieved when using Ar+ ions. In contrast, the chemical nature of Ga and its surface condensation into a nanosized phase turned out to act destructively on the nanowires' morphology, hampering the process of downsizing. In the surface nanocondensate Ga was found to coexist in both solid and liquid states, exhibiting polymorphism and peculiar dynamics under ion irradiation.

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Section: Resultssupporting

confidence: 74%

Ion beam processing of Au nanowires

Tuboltsev¹,

Räisänen²

2009

Nanotechnology

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“…10,35 Conceivably, the state of the surface may play an important role in the occurrence of such processes and an in situ investigation is probably mandatory for their further elucidation. Small-area ͑50 mϫ50 m͒ implantation and analysis is shown possible; the experimental results compare semiquantitatively with the corresponding data derived from dynamic computer simulations.…”

Section: Discussionmentioning

confidence: 99%

Focused-ion-beam implantation of Ga in elemental and compound semiconductors

Gnaser¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Small-area ͓ϳ͑50 m͒ 2 ͔, focused-ion-beam implantation of 25 keV Ga ϩ in Si, Ge, InP, InSb, and ZnSe was investigated by experiments and by computer simulations. Specifically, the Ga concentration was determined for implantation fluences ⌽ ranging from 1ϫ10 14 to 3ϫ10 17 Ga ϩ ions/cm 2 by means of secondary-ion mass spectrometry. In all materials the Ga peak concentration exhibits an essentially linear increase with fluence up to some 10 16 cm Ϫ2 ; for higher values of ⌽ the Ga concentration tends to saturate. The saturation content of Ga at the surface c ϱ ranges from ϳ2 at % for ZnSe to ϳ40 at % for Si. These values appear roughly inversely correlated with the specimens' sputtering yields and agree thus with the predictions of a model of ion retention in the presence of concurrent sputter erosion. The computer simulations with the dynamic binary-collision-approximation code T-DYN produce a fluence-dependent evolution of the Ga concentrations in the examined semiconductors which is in qualitative agreement with the experiments. Furthermore, partial sputtering yields and the most probable ranges for 25 keV Ga ϩ impact on the different materials have been determined both experimentally and from the simulation output.

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“…The effect of low E on damage decrease has been observed in Ar-BIB thinning (Barber, 1993) and Ga-FIB-assisted C1, etching (Sugimoto et al, 1990). However, for low-E Ga-FIB (at E = 5-15-keV and p = go"), high-dose bombardment on Si targets brings about congregaton of excess surface Ga atoms to form droplets (Ishitani et al, 1981). (Typical E value of Ga-FIB for cross-sectioning is 25-35-keV.)…”

Section: T Ishitani and T Yaguchi Table 3 Average Ion Range R Bamentioning

confidence: 99%

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Ishitani

Yaguchi

1996

Microsc. Res. Tech.

110

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A focused ion beam (FIB) was applied for cross‐sectional sample preparation with both transmission electron microscopes (TEM) and scanning electron microscopes (SEM). The FIB sample preparation has the advantage of high positioning accuracy for cross sections. On the other hand, a broad ion beam (BIB) has been conventionally used for thinning TEM samples. Although both FIB and BIB use energetic ion beams, they are essentially different from each other in many aspects such as beam size, beam current density, incident angle of the beam with respect to cross sections, and beam scanning (i.e., dynamic or static beam). In this study, FIB cross‐sectioning is compared with BIB thinning. We review inherent characteristics such as positioning accuracy and uniformity of cross section, radiation damage, and beam heating. Discussion is held from a viewpoint of ion beam and sample interaction. © 1996 Wiley‐Liss, Inc.

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Condensation of bombarding gallium ions on a silicon surface

Cited by 19 publications

References 6 publications

Ion beam processing of Au nanowires

Ion beam processing of Au nanowires

Focused-ion-beam implantation of Ga in elemental and compound semiconductors

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

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