Concurrent Design of an RTP Chamber and Advanced control system

Spence, Paul A.; Schaper, Charles D.; Kermani, Ahmad

doi:10.1557/proc-387-75

Cited by 10 publications

(4 citation statements)

References 2 publications

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“…[5]. (Copyright IEEE, 2004) One could also configure a chamber where the unpatterned surface of the wafer is irradiated, and all the lamp power is applied to the back of the wafer [22,45]. However one should bear in mind that wafers may have unintentional, and long length-scale, patterns on the backside from nonuniform deposition processes, including those that "wrap around" at the edge of the wafer.…”

Section: Practical Paths For Handling Pattern Effects In Volume Produ...mentioning

confidence: 99%

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A Short History of Pattern Effects in Thermal Processing

Timans

2008

MSF

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Radiant energy sources enable rapid and controllable thermal processing of wafers with closed-loop control of wafer temperature. However the use of energy sources that are not in thermal equilibrium with the wafers makes the heating process sensitive to the optical properties of the wafers. In particular, patterns on wafer surfaces can cause temperature non-uniformity at length scales where lateral thermal conduction cannot smooth out the effect. Such “pattern effects” are even more significant for advanced processing techniques like millisecond annealing and pulsed laser annealing, because of the extremely large heating powers employed. The issue of pattern effects was recognized early on in the development of radiant heating technology, but has recently become a critical issue for process control. Despite the challenges, many counter-measures can be deployed to minimize pattern effects, including modifications to the wafer design, changes in processing recipe and equipment configuration. Such solutions have enabled the use of radiant heating for even the most demanding device fabrication applications.

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Section: Practical Paths For Handling Pattern Effects In Volume Produ...mentioning

confidence: 99%

“…Rapid Thermal Processing and beyond: Applications in Semiconductor Processing [22,30,45]. However, this approach depends on the mirror returning the radiation to the region where it was emitted, and it rapidly ceases to be effective as the separation between the mirror and the wafer increases, as shown in Fig.…”

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confidence: 99%

A Short History of Pattern Effects in Thermal Processing

Timans

2008

MSF

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“…The values of k and C are assumed to depend on temperature but not on time or position; if thermal expansion is neglected, the value of p is fixed. Boundary conditions are given by k -= qeuge(O, z) atr=R [6] aT k ---= -q0,0(r, 9) atz=0 [7] k = q0(r, 0) atz= Z where the quantities qedge' qbottom, and q0 are heat flow per unit area into the wafer on the wafer edge, bottom [1] and top; at a particular point on the wafer, these quantities depend on the values of the following quantities at that point: wafer surface temperature, incident thermal radiation, and radiative and convective heat-transfer coefficients. [2] The model is developed by assuming that temperature is independent of z and azimuth 0.…”

Section: Temperature Effectsmentioning

confidence: 99%

Thermal Model Validation for Rapid Thermal Chemical Vapor Deposition of Polysilicon

Schaper

Kailath

1996

J. Electrochem. Soc.

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A radiant heat-transfer model is verified for a susceptorless multizone rapid thermal chemical vapor deposition (RTCVIJ) system. Qualitative agreement is shown between thermal model predictions and temperature measurements as deduced via experimental film thickness measurements of polysilicon. The analysis is used to demonstrate that a wafer support mechanism overlapping the edge of the wafer in an RTCVD system contributes significantly to spatial nonuniforniities and nonsymmetries. The thermal model is also verified by demonstrating qualitative agreement between the lamp powers predicted by the model to be the optimal settings with those that were determined experimentally to be approximately the optimal settings. In addition, the applicability of the model is studied by examining the performance of a closed-loop temperature controUer designed using the model. The model-based controller is demonstrated to produce better repeatable film thicknesses than an open-loop method through comparative experimental studies of 24 consecutively processed wafers.

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“…The specific geometry of the patterns and film thickness will affect the wafer's own processing uniformity. Even if one has the reactor perfectly tuned for a nonpatterned test wafer, the temperature nonuniformity may be unacceptable for the patterned product wafer if the pattern size is sufficiently large ( 5 mm) [12]. From the above point of view, the pattern effect is severe for RTP systems.…”

Section: Introductionmentioning

confidence: 99%

The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides

Lee

Chang

et al. 1999

IEEE Trans. Semicond. Manufact.

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A temperature compensation concept suitable for rapid thermal processing (RTP) with a nonuniform wafer temperature distribution is proposed in this work. Concentric Si rings with different diameters are placed on planar quartz or Si susceptors and are regarded as patterned susceptors for temperature compensation. We put monitor wafers on the patterned susceptor and see the effect of the patterned susceptor on the oxide thickness uniformity of the monitor wafers. The Si rings work as radiation barriers when placed on the quartz susceptor, but as heat conduction media when placed on the Si susceptor. By properly arranging the Si rings on the planar susceptors, the monitor wafers' oxide thickness uniformity can be improved.

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Concurrent Design of an RTP Chamber and Advanced control system

Cited by 10 publications

References 2 publications

A Short History of Pattern Effects in Thermal Processing

A Short History of Pattern Effects in Thermal Processing

Thermal Model Validation for Rapid Thermal Chemical Vapor Deposition of Polysilicon

The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides

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