Surface Properties of Semiconductors and Dynamics of Ionic Crystals 1971
DOI: 10.1007/978-1-4684-1578-0_10
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“…Strain engineering has been commonly implemented to indirectly control the metal–oxygen hybridization by changing the Ni–O bond distance in Ni-doped SrTiO 3 thin films and organometallic complexes . However, these methods are limited due to the constant application of strong fields or the irreversible modification of the composition, which can limit device performance via space charge accumulation or unwanted geometric distortion . Therefore, it remains a challenge for the scientific community to modify the hybridization of atomic orbitals in a stable but reversible manner.…”
Section: Introductionmentioning
confidence: 99%
“…Strain engineering has been commonly implemented to indirectly control the metal–oxygen hybridization by changing the Ni–O bond distance in Ni-doped SrTiO 3 thin films and organometallic complexes . However, these methods are limited due to the constant application of strong fields or the irreversible modification of the composition, which can limit device performance via space charge accumulation or unwanted geometric distortion . Therefore, it remains a challenge for the scientific community to modify the hybridization of atomic orbitals in a stable but reversible manner.…”
Section: Introductionmentioning
confidence: 99%