‘‘Concerted’’ regeneration of electroformed metal-insulator-metal devices

Abstract

Articles you may be interested inHighspeed and highsensitivity silicononinsulator metalsemiconductormetal photodetector with trench structure A lowenergy electron diffraction data acquisition system for very low electron doses based upon a slow scan charge coupled device camera Rev.

Impedance Spectroscopy Characterization in Bipolar Ta/MnOx/Pt Resistive Switching Thin Films

“…Despite extensive efforts in research and development, the underlying mechanism of resistive switching remains unclear. Schottky barriers with trapped charges in interface states, space charge‐limited current, phonon‐assisted tunneling, and the formation and rupture of filaments have all been proposed as explanations of the reported resistive switching responses. These proposed mechanisms involve a combination of bulk and interfacial contributions in both conductive and semiconducting states, depending on the electrical nature of a given device.…”

Interface-dependent resistance switching in Nd0.7Sr0.3MnO3 ceramics

“…Despite of the increasing volume of researches in this field, the physical mechanism of EPIR is still not clear, in particular, whether the resistance switching originates from the intrinsic bulk or from the extrinsic interface between the electrodes and the surface of oxide. Different models are available to understand the reversible switching effect, including models as a Schottky barrier with trapped charge state at the interface (Blom 1994), space-charge-limited current (SCLC) (Hickmott 1962), phonon-assisted tunneling (Contreras 2003), formation and rupture of filaments in bulk (Sharpe and Palmer 1996), and redox effect at the interface region (Waser et al 2009). However, the EPIR effect can be understood only partially or qualitatively based on the above mentioned models and is far beyond a general model to understand the mysterious transport behaviour.…”

Switching Phenomena in Iron-Oxide Thin Films Deposited through Chemical Vapor Deposition

“…[1][2][3][4] The electrical switching can originate from formation and rupture of filaments, phonon-assisted tunneling, conduction through defective traps or regime, spacecharge-limited current. [4][5][6][7][8] In particular, a variety of transition metal oxides exhibited the switching behavior in either uni-polar or bi-polar modes. Iron oxide thin films were investigated with special emphases on electrical properties as one of the candidates applicable for non-volatile memory devices for next-generation.…”