Concerning vacancy defects generated by moving dislocations in Si

Kveder, V. V.; Khorosheva, Мaria; Seibt, M.

doi:10.1016/j.matpr.2018.03.065

Cited by 8 publications

(16 citation statements)

References 15 publications

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“…Peak “C” in spectrum (1) corresponds to the well‐known dislocation related C‐defects with concentration of about 2 × 10 10 cm −3 . Most probably they are related to Ni atoms in dislocation cores appeared due to small occasional contamination of sample with Ni . The peak “D” might correspond to dislocation related D‐defects or to Au s atoms with concentration of about 2 × 10 10 cm −3 appeared due to small occasional contamination .…”

Section: Resultsmentioning

confidence: 99%

“…[18,27] Most probably they are related to Ni atoms in dislocation cores appeared due to small occasional contamination of sample with Ni. [16,17] The peak "D" might correspond . DLTS spectra of n-Si sample, measured before Cr in-diffusion (just after AlG).…”

Section: Methodsmentioning

confidence: 99%

“…But, a mc‐Si usually contains high concentration of dislocations and some other defects that can significantly influence a behavior of transition metal atoms. This stimulates a great interest to investigations of interaction of impurities with dislocations and to electronic properties of dislocations contaminated by the impurities …”

Section: Introductionmentioning

confidence: 99%

“…This stimulates a great interest to investigations of interaction of impurities with dislocations and to electronic properties of dislocations contaminated by the impurities. [10][11][12][13][14][15][16][17][18] Chromium is one of the dangerous impurities that can be often found in solar grade silicon. It is known that interstitial chromium atoms Cr i in n-Si and Cr i B s pairs in p-Si can significantly reduce the lifetime of minority carriers and, therefore to reduce significantly the efficiency of solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Interaction of Chromium Atoms with Dislocations and as‐Grown Vacancy Complexes and its Impact on the Electronic Properties of FZ‐Si

Kveder

Khorosheva

2019

Physica Status Solidi (b)

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By using deep level transient spectroscopy (DLTS) and light beam induced current (LBIC) the behavior of chromium atoms in float‐zone n‐Si in the presence of dislocations and as‐grown vacancy complexes has been investigated. It was found that reactions of interstitial chromium atoms with dislocations and with as‐grown nitrogen–vacancy complexes reduce significantly the nucleation barrier for the formation of chromium‐silicide precipitates so that nearly all Cr atoms are collected into the precipitates even in quenched samples. These nano‐precipitates are very active in electron‐hole recombination and give a very broad DLTS signal related to deep donor electronic states in the bandgap of silicon.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Interaction of Chromium Atoms with Dislocations and as‐Grown Vacancy Complexes and its Impact on the Electronic Properties of FZ‐Si

Kveder

Khorosheva

2019

Physica Status Solidi (b)

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“…Electrical activity of both dislocations and DTs was reported to depend on contamination with TMs . In those experiments, the plastic deformation was usually performed at temperatures around 700 °C, whereas the metals were then introduced at similar or higher temperatures.…”

Section: Introductionmentioning

confidence: 99%

Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study

Soltanovich

Орлов

Yarykin

et al. 2019

Physica Status Solidi (a)

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The deep‐level (DL) spectrum of plastically deformed n‐type Si and its modification due to interaction with the mobile Ni species are investigated by the deep‐level transient spectroscopy (DLTS) technique. The used geometry of plastic deformation makes it possible to separate the DL centers associated with the dislocations themselves or with dislocation traces, the quasi‐2D defects left by moving dislocations. It is shown that the chemomechanical polishing at room temperature in a Ni‐contaminated slurry results in the appearance of additional DL centers; the principal part of the novel centers forms due to nickel interaction with the dislocation trails. The DLTS signatures of the nickel‐related defects in our plastically deformed samples are similar to those for the nickel‐silicide precipitates.

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Dislocations in Crystalline Silicon Solar Cells

Wang,

Liu,

et al. 2023

Adv Energy and Sustain Res

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Dislocation is a common extended defect in crystalline silicon solar cells, which affects the recombination characteristics of solar cells by forming deep‐level defect states in the silicon bandgap, thereby reducing the lifetime of minority carrier. Hence, reducing the impact of defects on device performance is an effective strategy to optimize the performance of photovoltaic devices. This article reviews the observation and engineering of dislocation in Si solar cell. The structure and deformation of Si can be directly observed by chemical etching combined with electron microscopy. Also, more information about dislocation is obtained indirectly by monitoring the electrical and optical properties of Si. The classification, density, distribution of dislocations, and their interactions with other defects in Si can affect the lifetime of minority carriers and thereby reduce the performance of Si solar cells. In order to achieve higher cell efficiency, crystals with less or even no dislocation should be obtained. In addition to the specification of controlling the relevant parameters during the growth of silicon ingots to obtain the minimum dislocation density, it is necessary to study the behavior of dislocation in Si wafers under the combined action of external stress, temperature, and other defects.

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Concerning vacancy defects generated by moving dislocations in Si

Cited by 8 publications

References 15 publications

Interaction of Chromium Atoms with Dislocations and as‐Grown Vacancy Complexes and its Impact on the Electronic Properties of FZ‐Si

Interaction of Chromium Atoms with Dislocations and as‐Grown Vacancy Complexes and its Impact on the Electronic Properties of FZ‐Si

Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study

Dislocations in Crystalline Silicon Solar Cells

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