This study puts forward an application of a dense SiC coating of graphite heat elements as a barrier layer to prevent the spoilage of the purity of photovoltaic Si elements by impurities of the graphite. The SiC barrier performance in high‐temperature vacuum environment has been analyzed measuring the mass loss of graphite with/without coating of 5, 20, 30 μm 1200, 1400, and 1600°C. A thickness of 20 μm showed to be the best choice and could reduce the weight loss by more than 90%. The adhesion strength of samples decreased with the increase in heat treatment temperature.