Concentration profiles of boron implantations in amorphous and polycrystalline silicon

Skewness of implanted ion profiles

“…Figure 1 plots the skewness and kurtosis versus incident-ion energies for the implantation of boron ions into single-constituent materials such as silicon wafers. The symbols are adopted from experimental data of Hofker et al [3] and Fink et al [34]. Since Winterbon did not present data on skewness and kurtosis for boron implanted in silicon wafers in Ref.…”

“…Projected range refers to the mean range of the implanted ion profile, and range straggling defines the standard deviation of the implanted ion profile. However, the simplicity of this characterization justifies only limited use [2,3]. More accurately corresponding the asymmetrical behavior observed in implanted ion profiles requires higher moments of the projected range.…”

The effect of lattice and grain boundary diffusion on the redistribution of Xe in metallic nuclear fuels: Implications for the use of ion implantation to study fission-gas-bubble nucleation mechanisms

“…The Pearson IV distribution function [37] has been used by numerous investigators to represent the depth dependence of an ion implantation since first applied by Hofker et al [38]. The Pearson IV is given as…”

Al, B, and Ga ion-implantation doping of SiC

“…The Pearson IV fit 30 for the experimental SIMS profile based on the moments obtained from Eqs. 1 through 6 is shown in Fig.…”