Concentration-Dependent Laser Performance of Yb:YAG Ceramics and Passively Q-switched Yb:YAG/Cr,Ca:YAG Lasers

Dong, Jun; Ueda, Ken–ichi; Yagi, Hideki; Kaminskii, Alexander A.

doi:10.5772/7943

Cited by 2 publications

(5 citation statements)

References 60 publications

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“…[ 40 ] The experimental and calculated energy splittings for the Yb 3+ in the Si:B&Yb are shown in Figure 4 b. Again, a highly compelling correspondence of the spectral features and the theoretical fi t is observed.…”

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 58%

“…Again, a highly compelling correspondence of the spectral features and the theoretical fi t is observed. Figure 4 b also shows the Yb 3+ energy splittings in three other hosts (YAG, [ 40 ] CsCdBr 3 , [ 41 ] and Sr 5 (PO 4 ) 3 F. [ 41 ] The wide spread in the Yb 3+ splittings in different hosts is not atypical and is due to the particular sensitivity of the Yb 3+ to the crystal fi eld interaction. [ 41 ] For example, the 2 F 7/2 manifold overall splitting in CsCdBr 3 is only 421 cm −1 but is very large (1190 cm −1 ) in Sr 5 (PO 4 ) 3 F. 3+ in three other hosts (YAG, [ 40 ] CsCdBr 3 , [ 41 ] and Sr 5 (PO 4 ) 3 F [ 41 ] are also shown.…”

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 96%

“…2016, 26,[1986][1987][1988][1989][1990][1991][1992][1993][1994] www.afm-journal.de www.MaterialsViews.com , to the 7 F J levels in Eu 3+ , and to the 2 F 7/2 ground state manifold in Yb 3+ are indicated. For comparison, the characteristic lowest energy internal transitions from GdOBr:Ce 3+ (excited with 245 nm from Xe-continuous wave (Xe-CW) source [ 33 ] , ZnO:Eu 3+ [ 30 ] and YAG:Yb 3+ [ 40 ] are also indicated.…”

Section: +mentioning

confidence: 99%

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Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Lourenço

Hughes

Lai

et al. 2016

Adv Funct Materials

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1986 wileyonlinelibrary.com devices using alternative direct band gap semiconductors. This hybridization is highly undesirable, seriously violating the paramount technological and cost advantages inherent in silicon integration that has driven its exponential growth. The ultimate vision of silicon integration is a totally single silicon solution incorporating both electronic and photonic functions. Here we report a novel phenomenon-siliconmodifi ed rare-earth (RE) transitions-and demonstrate light emitting diodes (LEDs) and mid-IR photodetectors. Universally, luminescence from RE-doped semiconductors has shown only the expected characteristic intrinsic transitions; consequently emission from REs with transitions greater than the semiconductor band gap energy should not occur. Europium, ytterbium, and cerium have their lowest energy transitions well above the band gap energy of silicon. Remarkably, we see photoluminescence (PL) and electroluminescence (EL) due to Eu, Yb, and Ce in silicon but dramatically redshifted in wavelength and strikingly enhanced in intensity by up to 900 times compared with conventional RE-doped silicon LEDs. These results refute previous thinking on the interaction of REs with semiconductors and offer a promising route to effi cient, fully silicon-based, optoelectronic devices across the near-and mid-IR.Silicon photonics has seen rapid advances [1][2][3][4][5][6][7][8][9][10][11][12] and the technology is seen not just as required for next-generation computers but also as a vehicle for a wide range of other high value and important, societal, environmental, security, and health applications, such as greenhouse gas and explosive residue sensing, and fast medical diagnostics. [ 13 ] REs elements in silicon have long been considered promising for optical sources, and more recently for quantum technologies. [ 14 ] The partially fi lled inner 4 f -shell gives sharp internal transitions highly insensitive to crystal host and temperature and many of the transitions have intrinsic gain and support lasing. However, because the transitions are internal to the RE they have not been seen so far as a particularly promising route to photodetectors.Light emission at 1.54 µm due to Er ions in III-V and Si has been extensively investigated and light emitting devices successfully demonstrated although with limited effi ciency. [15][16][17][18][19][20][21] PL and EL from silicon and III-V semiconductors incorporating the RE thulium have also been achieved-transitions between the Tm 3+ lowest excited states and the ground state lead to emissions around 0.8, 1.2, and 2 µm. [22][23][24] Both Er and Tm in silicon, and indeed all others RE reported in silicon Silicon-Modifi ed Rare-Earth Transitions-A New Route to Near-and Mid-IR Photonics Manon A. Lourenço , * Mark A. Hughes , Khue T. Lai , Imran M. Sofi , Willy Ludurczak , Lewis Wong , Russell M. Gwilliam , and Kevin P. Homewood Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on ...

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Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 58%

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 96%

Section: +mentioning

confidence: 99%

See 1 more Smart Citation

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Lourenço

Hughes

Lai

et al. 2016

Adv Funct Materials

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“…Развернутые сообщения о результатах исследований в области создания высокопрозрачных керамик приведены в обзорах [12,[35][36][37][38][39]. В настоящей работе основное внимание уделяется синтезу лазерных керамик с использованием нанопорошков, приготовленных методом лазерного испарения мишеней, с указанием важных особенностей такого подхода, который не нашел должного отражения в литературе.…”

Section: Preparing Nanopowdersunclassified

“…The detailed reports on the results of research in the field of the creation of high-transparent ceramics are given in the reviews [12,[35][36][37][38][39]. In this paper, the focus is on the synthesis of laser ceramics using nanopowders prepared by laser target evaporation, indicating important features of this approach, and which has not been adequately reflected in the literature.…”

Section: Introductionmentioning

confidence: 99%

High-Transparent Ceramics Prepared Based on Nanopowders Synthesized in a Laser Torch. Part I: Preparation Features

Осипов¹,

Платонов²,

Шитов³

et al. 2017

FRos

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Concentration-Dependent Laser Performance of Yb:YAG Ceramics and Passively Q-switched Yb:YAG/Cr,Ca:YAG Lasers

Cited by 2 publications

References 60 publications

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

High-Transparent Ceramics Prepared Based on Nanopowders Synthesized in a Laser Torch. Part I: Preparation Features

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