Concentration dependence of the absorption coefficient for <i>n</i>− and <i>p</i>−type GaAs between 1.3 and 1.6 eV

Casey, H. C.; Sell, D. D.; Wecht, K. W.

doi:10.1063/1.321330

Cited by 605 publications

(173 citation statements)

References 19 publications

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“…3 extracted from P1, P2-1, P3-1 and N1-1 are in close agreement, assuming L e and L h of 0.155 and 0.170 µm respectively. This suggests that the measured is independent of the doping type for the levels used in this work, in agreement with those reported in other semiconductors [20,21].…”

Section: Resultssupporting

confidence: 80%

Determination of absorption coefficients in AlInP lattice matched to GaAs

Cheong¹,

Ng²,

Krysa³

et al. 2015

J. Phys. D: Appl. Phys.

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Abstract-The absorption properties of Al 0.52 In 0.48 P have been investigated near the fundamental absorption edge by measuring the photocurrent as a function of wavelength in a series of PIN and NIP diodes. Modelling of the photocurrent in these structures enables the absorption coefficients to be determined accurately over a wide dynamic range, which allows the direct and indirect band-gap to be determined.

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Section: Resultssupporting

confidence: 80%

Determination of absorption coefficients in AlInP lattice matched to GaAs

Cheong¹,

Ng²,

Krysa³

et al. 2015

J. Phys. D: Appl. Phys.

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“…This value is in agreement with the data from Casey et al [HCC75]. Intensity loss within the active RPG section of the incident pump power I 0 can be calculated with:…”

Section: Nm Sml-vecselsupporting

confidence: 81%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…The measurements were performed at a 535 nm pump laser wavelength, and we accordingly set d opt = 170 nm based on the optical absorption curve for high-purity GaAs [38]. The theoretical signals (13), easily evaluated numerically with a simple quadrature scheme, show good agreement with the experimental data for best-fitting values D = 24 mm 2 /s (κ 41.5 W/m-K), r CF = 467 nm and b = 1.06 (Fig.…”

Section: Application Examplesmentioning

confidence: 99%

Compact stochastic models for multidimensional quasiballistic thermal transport

Vermeersch

2016

Journal of Applied Physics

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The Boltzmann transport equation (BTE) has proven indispensable in elucidating quasiballistic heat dynamics. Experimental observations of nondiffusive thermal transients, however, are interpreted almost exclusively through purely diffusive formalisms that merely extract 'effective' Fourier conductivities. Here, we build upon stochastic transport theory to provide a characterisation framework that blends the rich physics contained within BTE solutions with the convenience of conventional analyses. The multidimensional phonon dynamics are described in terms of an isotropic Poissonian flight process with rigorous Fourier-Laplace single pulse response P ( ξ, s) = 1/[s+ψ( ξ )]. The spatial propagator ψ( ξ ), unlike commonly reconstructed mean free path spectra κΣ(Λ), serves as a genuine thermal blueprint of the medium that can be identified in compact form directly from raw measurement signals. Practical illustrations for transient thermal grating (TTG) and time domain thermoreflectance (TDTR) experiments on respectively GaAs and InGaAs are provided.

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Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV

Cited by 605 publications

References 19 publications

Determination of absorption coefficients in AlInP lattice matched to GaAs

Determination of absorption coefficients in AlInP lattice matched to GaAs

Design and Realization of Novel GaAs Based Laser Concepts

Compact stochastic models for multidimensional quasiballistic thermal transport

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