Concentration dependence of As<sub>2</sub>S<sub>3</sub> chalcogenide glass cluster size in amine solution

Dutta, Nikita S.; Arnold, Craig B.

doi:10.1039/c8ra07610c

Cited by 13 publications

(5 citation statements)

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“…The experiments with solutions of As-S system proved, that ChG concentration has a high impact on size of glass nanoclusters/fragments that are final product of bulk ChG dissolution [27,28]. Generally, the size of ChG clusters is increasing with increasing solution concentration.…”

Section: The Effect Of the Solution Concentrationmentioning

confidence: 95%

“…Generally, the size of ChG clusters is increasing with increasing solution concentration. However, the ChG clusters are still very small (several nanometers in diameter [27,28]) which questions the impact of solution concentration on properties of subsequently deposited thin films. According to [19], the thickness of solution processed ChG thin films has also a critical role in formation of organic residuals gradient within their volume.…”

Section: The Effect Of the Solution Concentrationmentioning

confidence: 99%

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Solution processed Ge₂₀Sb₅S₇₅ thin films: the effect of solution concentration and multiple layers stacking

Šlang

Janíček

Pálka

2019

Opt. Mater. Express

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Ge 20 Sb 5 S 75 thin films with high chemical resistance to aliphatic amines were deposited from solutions of various glass concentrations (0.015-0.09 g of grinded glass material/ml of n-butylamine) by the spin-coating technique. As-prepared and annealed thin films were analyzed by spectroscopic ellipsometry and EDS (energy-dispersive X-ray spectroscopy). Results proved that the refractive index of thin films was not affected by the solution concentration (within studied range), and the studied optical properties of deposited samples were homogenous in their volume. The Ge 20 Sb 5 S 75 solution of the highest concentration (0.09 g/ml) was chosen for deposition of thicker chalcogenide glass material using multiply deposition/thermal stabilization procedure. Prepared multilayers proved to have good optical quality and homogenous chemical resistance through the whole thickness. No interfaces between layers were observed from etching kinetics and SEM scans. Thus, the results confirmed that multiple layers stacking procedure is suitable for deposition of thick homogenous Ge 20 Sb 5 S 75 thin films.

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Section: The Effect Of the Solution Concentrationmentioning

confidence: 95%

Section: The Effect Of the Solution Concentrationmentioning

confidence: 99%

Solution processed Ge₂₀Sb₅S₇₅ thin films: the effect of solution concentration and multiple layers stacking

Šlang

Janíček

Pálka

2019

Opt. Mater. Express

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“…According to [34] dissolution of Ge-Sb-S bulk glass leads to the nearly molecular sizes clusters. Contrary, dissolution of As-S bulk glasses results in significantly larger clusters with dimension of several nanometers [35,36). Lower size of glass clusters leads to higher solvation ratio that is subsequently reflected in a higher content of organic residues in thin films with higher Ge20Sb5S75 content.…”

Section: Fig 1: the Elemental Composition Of As-prepared And Annealed...mentioning

confidence: 99%

Preparation of quaternary solution processed chalcogenide thin films using mixtures of separate As40S60 and Ge20Sb5S75 glass solutions

Jancalek

Šlang

Kurka

et al. 2021

Journal of Non-Crystalline Solids

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“…As2S3 dissolved in alkyl amines can be described as a nanocolloidal solution consisting of flat clusters, that internally retain the structure of the layer-like starting material but capped by ionic pairs of sulfide dangling bonds and alkyl ammonium molecules. [31] Without annealing, those solvent related atomic defect states suppress light emission from As2S3. [14] Due to the fluid nature of the drop casted materials, the solution will accumulate in the hollow region [13] with excess chalcogenide material above and below the silicon membrane.…”

Section: Self-assembled Chalcogenide Metasurfacementioning

confidence: 99%

Light Emission from Self‐Assembled and Laser‐Crystallized Chalcogenide Metasurface

Wang

Mao

et al. 2020

Advanced Optical Materials

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demonstrated to improve the light emission efficiency through enhancing light outcoupling efficiency [1,2] and spontaneous emission rate. [3][4][5] Nanophotonic engineering can lead to narrowband and directive light emission. [6][7][8] Chalcogenide materials with unique phase change properties have been explored for tunable thermal emission [9] or reflection [10] in infrared wavelength ranges. PhC waveguide has been demonstrated on thin-film chalcogenide by e-beam lithography, showing slow light and resonance-enhanced parametric nonlinear process in material. [11,12] To reduce cost and improve scalability, solution-processed chalcogenide nanostructure is recently reported through solution process and self-assembling. [13] In this work, we demonstrate the first active chalcogenide metasurface fabricated by self-assembling with tunable dimensions. The nanophotonic structure is tailored to enhance the light emission efficiency through resonance-enhanced absorption of excitation, suppressing guided mode at emission wavelength and Purcell enhancement. [14][15][16][17] The 2D hexagonal chalcogenide nanorod arrays are self-assembled [13] on a silicon template through solution processing. [18][19][20][21][22][23][24] Silicon nanophotonic structure with a few nanometer surface roughness enables delamination of top and bottom bulk chalcogenides during solvent evaporation leaving only a filled nanorod array. Nanophotonic confinement can simultaneously manifest local photon density for enhanced Subwavelength periodic confinement can collectively and selectively enhance local light intensity and enable control over the photoinduced phase transformations at the nanometer scale. Standard nanofabrication process can result in geometrical and compositional inhomogeneities in optical phase change materials, especially chalcogenides, as those materials exhibit poor chemical and thermal stability. Here the self-assembled planar chalcogenide nanostructured array is demonstrated with resonance-enhanced light emission to create an all-dielectric optical metasurface, by taking advantage of the fluid properties associated with solution-processed films. A patterned silicon membrane serves as a template for shaping the chalcogenide metasurface structure. Solution-processed arsenic sulfide metasurface structures are self-assembled in the suspended 250 nm silicon membrane templates. The periodic nanostructure dramatically manifests the local lightmatter interaction such as absorption of incident photons, Raman emission, and photoluminescence. Also, the thermal distribution is modified by the boundaries and thus the photothermal crystallization process, leading to the formation of anisotropic nanoemitters within the field enhancement area. This hybrid structure shows wavelength-selective anisotropic photoluminescence, which is a characteristic behavior of the collective response of the resonantguided modes in a periodic nanostructure. The resonance-enhanced Purcell effect can manifest the quantum efficiency of localized light emission.

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Concentration dependence of As₂S₃ chalcogenide glass cluster size in amine solution

Abstract: A mechanism for cluster size determination in solution-processed chalcogenide glasses is proposed, enabling improved property control in optoelectronic device fabrication.

Cited by 13 publications

References 30 publications

Solution processed Ge₂₀Sb₅S₇₅ thin films: the effect of solution concentration and multiple layers stacking

Solution processed Ge₂₀Sb₅S₇₅ thin films: the effect of solution concentration and multiple layers stacking

Preparation of quaternary solution processed chalcogenide thin films using mixtures of separate As40S60 and Ge20Sb5S75 glass solutions

Light Emission from Self‐Assembled and Laser‐Crystallized Chalcogenide Metasurface

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Concentration dependence of As2S3 chalcogenide glass cluster size in amine solution

Abstract: A mechanism for cluster size determination in solution-processed chalcogenide glasses is proposed, enabling improved property control in optoelectronic device fabrication.

Cited by 13 publications

References 30 publications

Solution processed Ge20Sb5S75 thin films: the effect of solution concentration and multiple layers stacking

Solution processed Ge20Sb5S75 thin films: the effect of solution concentration and multiple layers stacking

Preparation of quaternary solution processed chalcogenide thin films using mixtures of separate As40S60 and Ge20Sb5S75 glass solutions

Light Emission from Self‐Assembled and Laser‐Crystallized Chalcogenide Metasurface

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Concentration dependence of As₂S₃ chalcogenide glass cluster size in amine solution

Solution processed Ge₂₀Sb₅S₇₅ thin films: the effect of solution concentration and multiple layers stacking

Solution processed Ge₂₀Sb₅S₇₅ thin films: the effect of solution concentration and multiple layers stacking