Concentration anomalies of the thermal conductivity in PbTe-PbSe semiconductor solid solutions

Abstract

Studies of the concentration (0–3 mol% PbSe) and temperature (250–670 K) dependences of the lattice thermal conductivity λp in PbTe–PbSe semiconductor solid solutions have shown that in the range of 0.75–1.25 mol% PbSe an anomalous increase in λp under increasing PbSe concentration takes place in the λp isotherms, plotted as λp/λp0, where λp0 is the lattice thermal conductivity in the absence of PbSe. The observed effect is attributed to critical phenomena and self‐organization processes accompanying the transition from dilute solid solutions to an impurity continuum.

Mechanical and Thermoelectric Properties of PbSe$_{1–x}$Te$_x$ Semiconductor Solid Solutions ($x$ = 0–0.045)

“…При дослідженні нами нелегованих ТР на основі PbTe (x = 1-0,95) в системі PbSe 1−x Te x , як у литому, так і у пресованому станах [4][5][6], на концентраційних залежностях механічних та ТЕ властивостей за кімнатної температури поблизу x = 0,995 були виявлені аномальні ділянки.…”

Mechanical and Thermoelectric Properties of PbSe1-xTex Solid Solutions

“…Pressing of materials is widely used in the manufacture of TE devices to increase strength and homogeneity degree of samples as compared to cast ones. In [2][3][4] we reported on the anomalous character of properties' dependences (microhardness, Seebeck coefficient, Hall coefficient, electrical conductivity, Hall mobility of charge carriers, thermal conductivity) of PbTe 1-x Se x solid solutions in the range of x = 0.05 for both cast and pressed samples. The observed effects stimulate more detailed investigations of the concentration dependences of TE properties, namely, under small amounts of the second component in the solid solutions based on IV-VI semiconductor compounds.…”