Block-copolymer self-assembly has proven to be an attractive fabrication method for nanotechnology applications because of its ability to precisely define regular patterns with dimensions in the range of 10 to 100 nm. [1,2] Thin films of cylindrical and spherical patterns have been successfully used as lithographic templates in electronics applications [3][4][5][6][7][8] that require an optimal mask profile along with a minimum number of defects. Thin films of lamellar diblock copolymers have an advantageous profile for lithographic applications involving striped patterns; [2,9,10] however, their coarsening dynamics (i.e., pattern-forming properties) have not been as fully characterized as those of their asymmetric counterparts, [11][12][13] and their utility is not yet demonstrated.In this Communication we present a new polymer multilayer fabrication method -analogous to heteroepitaxial film growth -employing thin films of lamellar polystyrene-blockpoly(methyl methacrylate) (PS-b-PMMA). We also demonstrate the effectiveness of the technique by patterning silicon wire arrays with a 20 nm width and a 35 nm center-to-center spacing. In understanding the pattern-formation properties of lamellar-phase PS-b-PMMA, we find that orientational correlations in symmetric (lamellar) thin films evolve much more slowly with time than in asymmetric (cylindrical) films, limiting their use in applications that require long-range orientational order. To overcome this limitation, we demonstrate a multilayer pattern-formation process that features defect-free lamellar pattern formation.Diblock copolymer thin films of cylindrical and lamellar phases both form striped patterns that coarsen with annealing time (t) according to the power law n(t) ∼ t f , [14,15] where n is a correlation length associated with grain size, and f is termed the growth exponent. Striped patterns form from parallel oriented cylindrical-phase films and perpendicular lamellar domain orientations. Considerable previous theoretical work has described both the formation and evolution of generalized striped patterns [16][17][18] as well as two-dimensional lamellar block copolymers, [19][20][21][22][23] with predictions for f ranging from 0.2 to 0.5. Experimentally, Harrison et al. first measured the time evolution of n(t) in cylindrical phase PS-b-PI diblock copolymer thin-films, [24] finding a value for f of 0.25. Earlier experimental work by Garetz et al. [25] measured n in bulk lamellar diblock copolymers. From their data, one can estimate a value for f in the range of 0.066-0.131, i.e., significantly lower than f = 0.25. Despite their relevance in lithographic applications, correlations on thin films of symmetric diblock copolymers have been studied less. We prepared thin-film striped patterns of both parallel PSb-PMMA cylinders (Fig. 1a) and perpendicular PS-b-PMMA lamellae (Fig. 1b and c) to compare the time evolution of n. We spin-casted thin films of cylindrical and lamellar materials, and annealed them (195°C in vacuum) for times ranging from 5 to 4000 min...