Computer Simulation of the Origination Porosity

Radiation Damaging of 3C-SiC Lattice: Computer Simulation of Brownian Motion of Non-Point Defects

“…A stochastic simulation model, see [2][3][4][5] and references herein, of initial stage of first order phase transition (or nucleation) is applied to study of blistering [6] in solids when vacancy-gaseous pores appear due to ions Xe ++ penetration. It involves the proper selection of enthalpy of gaseous nucleus formation in lattice along with the indirect elastic interaction potentials between defects in lattice.…”

“…Earlier the kinetic equations for DFs of BP were solved using a stochastic analogue method (it is the original method which is based on the solution of the Ito-Stratonovich stochastic differential equation with functional-coefficients similar to stochastic molecular dynamics). The kinetic equations for the discrete time grid are solved in this work by using splitting technique in terms of physical processes [2][3][4][5]. The Kolmogorov-Feller equation for blister size evolution at the point with the coordinate r is as follows:…”

“…Collective elastic interactions of defects between themselves depend on distances between each with other and from its distance to boundary of layers: it leads to that defects are able to be localized into lattice according values of elastic field and they organized some structures in form chains or layers of defects. The sizes of such structures in case of Mo/Si layers, distribution of porosity and mechanical stress depending from density of defects were discussed in [3,4]. Here we pay attention on kinetic distribution function of pores sizes in depth of SiC layer using models of nonlinear stage of phase transitions.…”