Computer Simulation of Oxygen Segregation in CZ/MCZ Silicon Crystals and Comparison with Experimental Results

Abstract

A computer model for the fluid flow and dopant transfer/segregation in Czochralski crystal growth (CZ) and in Czochralski crystal growth in an axial magnetic field (MCZ) is applied to the simulation of the oxygen source, transport, and segregation in CZ and MCZ silicon growth. To model the oxygen source, which is ablation of the silica crucible, the oxygen concentration at the melt/crucible interface is assumed to be at an equilibrium concentration which is dependent on temperature as described by Arrhenius kinetics. The oxygen sink is mostly evaporation of silicon monoxide from the meltfree surface; a small percentage of the dissolved oxygen is incorporated into the growing crystal. Good agreement is established between the simulated oxygen radial profiles and experimental results in CZ/MCZ silicon growth, as well as in the comparison of the simulated ablation rate of the crucible with the experimental data reported to date.

Thermodynamics and phase stability in the Si–O system

“…Data for the partition coefficient k between solid and liquid silicon, mostly the equilibrium value, have been published by [132,[161][162][163][164][165][166][167][168][169][170][171][172][173] and are plotted in Fig. 13.…”

Finite Difference Analysis of Radial Phosphorus Dopant Distribution in Czochralski-Grown Silicon Single Crystals

“…Quantitative measurements of dopant distributions in Si magnetic Czochralski ͑MCZ͒ crystals indicated that large radial dopant distributions exist. [5][6][7] The general lack of information about radial dopant distributions, combined with the limited information that substantial radial dopant concentration distributions can exist, suggests that additional analysis of such radial dopant concentration distributions is required. Therefore, in this work we made detailed, quantitative simulations of the radial dopant distribution in Si crystals, and compared these numerical results with previous measurements.…”

Influencia De La Composición Y Estructura De Los Substratos De Silicio Monocristalino en El Comportamiento Eléctrico De Las Células Fotovoltaicas Cristalinas De Alta Eficiencia.

“…Durante la cristalización, el oxígeno es incorporado en el cristal en posición intersticial (O i ). Esta incorporación, que se realiza desde el baño de silicio fundido a través del frente de cristalización, es regida principalmente por la concentración de oxígeno en el baño y las leyes de segregación del oxígeno en el silicio (Kim, 1991). La etapa de enfriamiento del lingote tras la cristalización facilita la difusión hacia el interior del cristal del oxígeno inicialmente incorporado.…”