Computer modelling of RbCdF3: Structural and mechanical properties under high pressure, defect disorder and spectroscopic study

Lucena, Joéslei L.O.; Mesquita, Bruno Ribeiro de; Santos, Ricardo D.S.; Otsuka, André M.; Couto, Marcos A.; Rezende, Marcos V. dos S.; Jackson, Robert A.

doi:10.1016/j.jssc.2022.123173

Cited by 3 publications

(2 citation statements)

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“…Atomistic simulations indicate that the defects most likely to form (i.e., those with the lowest formation energies) include F − vacancies (V F ), impurity oxygen ions (O F 2− ), Rb + and Cd 2+ vacancies (V Rb or V Cd ), and associated interstitials. [30] The samples were transparent and strongly fluorescent (Figure S1b, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…[42,43] Thus, the induced absorption is not explicitly related to the presence of dopant ions and is instead derived from defects intrinsic to the host compound. Of the standard vacancy centers that form during high-temperature crystal syntheses (V Rb , V Cd , V F ), [30] only the latter anion vacancy functions as an electron trap. Moreover, the Mollwo-Ivey relation places the peak F-center absorption energy for RbCdF 3 at ≈4.11 eV.…”

Section: Resultsmentioning

confidence: 99%

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Long‐Lived UV‐Rewritable Luminescent Memory in a Fluoroperovskite Crystal

Schuyt,

Williams,

Chong

2023

Advanced Optical Materials

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Photostimulated luminescence phosphors are promising candidates for next‐generation optical data storage devices. Herein, optically‐reversible luminescence modulation is demonstrated using UV wavelengths in the fluoroperovskite RbCdF3:Mn, where the modulation is mediated by photostimulated luminescence processes. UV‐C stimulation enhances the luminescence from Mn2+ centers and simultaneously fills electron traps. This charging process occurs via electron transfer from Mn2+ ions to fluorine vacancies, yielding Mn3+ ions and F‐centers, and is mediated by conduction band transport. UV‐A stimulation restores the material to the initial state. This discharging process occurs via electron transfer from F‐centers to Mn3+ ions and is similarly mediated by conduction band transport. Moreover, the discharging process manifests Mn2+ photostimulated luminescence. The primary trap state has activation energies in the range 1.46 to 1.73 eV and has room temperature lifetimes exceeding 40 000 years. A kinetic model is presented and evaluated that accurately describes the charge transport and luminescence properties of the material. Thus, a material is presented via which ultra‐long term, multi‐level luminescent data storage can be realized, and a model via which precise control over the luminescence modulation and photostimulated luminescence intensities can be achieved.

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Section: Resultsmentioning

confidence: 99%