Computer modelling of magnetron discharges

Abstract

In this paper, some modelling approaches to describe direct current (dc) magnetron discharges developed in our research groups will be presented, including an analytical model, Monte Carlo simulations for the electrons and for the sputtered atoms, a hybrid Monte Carlo-fluid model and particle-in-cell-Monte Carlo collision simulations. The strengths and limitations of the various modelling approaches will be explained, and some characteristic simulation results will be illustrated. Furthermore, some other simulation methods related to the magnetron device will be briefly explained, more specifically for calculating the magnetic field distribution inside the discharge, and for describing the (reactive) sputtering.

Nanoscale Cu/Ta multilayer deposition by co-sputtering on a rotating substrate. Empirical model and experiment

“…A change in other deposition parameters such as source power(s) or sputter gas pressure requires a complete redetermination of the deposition field due to complex influences such as re-sputtering and substrate heating. Monte Carlo modeling [38] could be used to obtain the deposition field as a function of deposition parameters and hence eliminate the need for experimental determination of the deposition field. Such simulations can be used to create libraries of deposition fields for a given deposition system.…”

Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs

“…In addition, the closed magnetic field configuration employed here tends to confine fast electrons between both magnetron cathodes. Fast electrons emitted from one cathode thus can reach the other cathode and ionization of atoms is taking place on their way [36].…”

Molecular dynamics simulations of supported metal nanocatalyst formation by plasma sputtering

“…It can be used as an atom or cluster source [2,3] for which composition, kinetic energies and angle distributions (more or less peaked) are well defined. Due to the atomic nature of the plasma sputtering process, deposition of thin films in the form of supported clusters of well-defined composition, structure and morphology has become possible.…”