Computer modeling of MWIR single heterojunction photodetector based on mercury cadmium telluride

Saxena, Pulkit; Chakrabarti, P.

doi:10.1016/j.infrared.2009.07.009

Cited by 23 publications

(11 citation statements)

References 28 publications

(58 reference statements)

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“…(iii) The tunnelling of charge carriers across the p-n hetero interface produces tunnelling current. Thus, the total dark of the proposed structure is combination of all above major current components and is [16][17][18][19][20] …”

Section: Simulation and Analysis 21 Dark Current Analysismentioning

confidence: 99%

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Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement

Saxena¹

2017

Def. Sc. Jl.

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In the present study, an extensive numerical analysis has been performed and an effort has been made to understand the underlying physics, which is presently unclear for researchers for development of third generation FPA infrared detectors based on HgCdTe material. To reduce technology development cost associated with dual band photodetector for operation at MWIR and LWIR regions, a 2D theoretical model has been proposed including all the relevant physics. The structure under present study considers back-to-back diode structures to detect simultaneous MW/LW operative wavelength by changing the biasing polarity of the diodes. The optimum electrical and optical outputs from dual band detector have been achieved through performing design of experiments. The coupled basic semiconductor equations including nonlinear continuity, transport and Poisson's equations have been solved to achieve electrical (I-V) characteristics under no bias condition and modern optics equations has been coupled to semiconductor equations to obtain optical characteristics. The quantum efficiency of both detectors has been computed and compared with experimental results. The computed results obtained on the basis of proposed model accurately matches with the experimental results reported by others researcher. The results exhibit the quantum efficiencies, QE MW =95 per cent and QE LW =74.5 per cent, respectively.

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Section: Simulation and Analysis 21 Dark Current Analysismentioning

confidence: 99%

“…Carrier lifetime modelling has been performed by taking into account AugER, Shockley Read hall (SRh), Trap assisted tunnelling (TAT) and band-to-band recombination models. The Fermi-Dirac statistics for calculation of carrier transport within non-parabolic conduction band has been used in present analysis [16][17][18][19][20][21][22] .…”

Section: Introductionmentioning

confidence: 99%

Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement

Saxena¹

2017

Def. Sc. Jl.

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“…Mercury Cadmium Telluride (HgCdTe) is one of the most prominent semiconductor material for mid (2-5 um) and long-wavelength (8-12 um) infrared photon detectors. This is because of the fact that the mole fraction (x) of cadmium in Hgl-xCdxTe can be adjusted suitably to tailor the energy band-gap of the material to match the wavelength of the above atmospheric windows [2]. However it was assumed previously that the desirable properties of these infrared photon detectors are accessible only at cryogenic temperatures.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of High Operating Temperature MWIR Photo Detector Based on Mercury Cadmium Telluride

Nadimi¹,

Sadr²

2011

IJCEE

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Abstract-High operating temperatures infrared photo detectors are needed for improving the performance of these systems. To obtain high device performance at higher temperatures, the thermally generated noise required to be reduced. Minority-carrier extraction and exclusion techniques are the approaches for decreasing the thermal noise of infrared systems. In the present work, an Hg1-xCdxTe photodiode was studied and simulated for operation in the MWIR region. A simulation of the device was carried out by using ATLAS software from SILVACO® in order to study the performance of the photo detector at near room temperatures. The device was characterized in respect of energy band diagram, carrier concentration, doping profile, dark current and responsively.Index Terms-HgCdTe, infrared photo detector, simulation.

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“…Affordable high performance infrared systems require cost-effective infrared detectors that operate without cooling [1][2][3][4][5][6][7][8][9][10][11][12]. Thus special attention is put on realization and optimization of the devices for room temperature operation having short response time [4,8,12,13]. Recently uncooled operation of IR detectors has been reported [1][2][3][4][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

“…Thus special attention is put on realization and optimization of the devices for room temperature operation having short response time [4,8,12,13]. Recently uncooled operation of IR detectors has been reported [1][2][3][4][13][14][15]. The photoelectromagnetic (PEM) effect has been traditionary used for ambient temperature photoconductors in the middle and far infrared band.…”

Section: Introductionmentioning

confidence: 99%