Computer analysis of DC field and current-density profiles of DAR impatt diode

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

“…The main reason of higher peak power capability of DAR Si device compared to DDR device operating at a particular frequency band can be explained from almost complete cancellation of space charge in the drift region of the device [1,2]. Further higher bias current can be pushed through DAR device to obtain higher RF output power as mentioned earlier in this paper.…”

“…Som et al [1] in 1974 studied analytically the properties of DAR Transit Time diode and reported that DAR diodes can deliver high power at high bias current. Later Datta et al [2] carried out DC simulation of DAR Si transit time diode by a double-iterative field-minimum method. They reported that the net mobile space charge density does not increase significantly in the central drift layer of DAR device with increasing current density unlike singledrift region (SDR) and double-drift region (DDR) devices.…”

Effect of Current Density on the Series Resistance of SDR (n+np+) Silicon IMPATT Diode in the X Band

“…The normalized current density difference J p À J n aJ 0 and the electric field profiles shown in Fig. 3 and 4, respectively, indicate that the diode (HP 5082-0432) satisfies the appropriate boundary conditions [9,10]. The electric field profile of the present n np SDR Si diode at 100 C and at operating current density 3X54 Â 10 6 A m À2 , indicates that the diode is free from severe space charge effects although it is slightly punched through that decreases the series resistance of the diode.…”

“…In this analysis dc electric field and the normalized current density profiles have been obtained following the approach of Datta et al [9]. Following the Gummel and Blue approach in the small signal condition with the dc data as input parameters and applying the appropriate boundary conditions at the two edges of the depletion region, the diode negative resistivity R and the reactivity X at every space point of the depletion region have been solved by the following differential equations [10,11]:…”

Theory of the mm Wave IMPATT Diode: A Review

“…The Double Avalanche Region (DAR) Impatt was first appeared with complete small signal analytical solution in 1974 [15] and thereafter large signal analysis and computer simulations have been published [16,21]. Here we present the large signal analysis along with some computer simulation results.…”