Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

Hareland, S.A.; Manassian, M.; Shih, Wei-Kai; Jallepalli, S.; Wang, H.; Chindalore, G.; Tasch, A.F.; Maziar, C.M.

doi:10.1109/16.701479

Cited by 33 publications

(23 citation statements)

References 9 publications

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“…The variation consider the structural confinement [22] together with the electrical one [23] by Since this variation depends on the surface electrical field (E S ) and, consequently, on the applied biases, its derivative should also be considered in the capacitance calculation. It is given by…”

Section: Quantization and Short-channel Effectsmentioning

confidence: 99%

Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors

Trevisoli

Doria

Souza

et al. 2016

IEEE Trans. Electron Devices

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This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which includes shortchannel effects, and accounts for the dependences on the device dimensions, doping concentration, and quantum effects. It is validated with 3-D Technology Computer-Aided Design (TCAD) simulations for several device characteristics and biases as well as with the experimental results.

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Section: Quantization and Short-channel Effectsmentioning

confidence: 99%

Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors

Trevisoli

Doria

Souza

et al. 2016

IEEE Trans. Electron Devices

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“…19 Compared with the classical simulation, fully self-consistent quantum-mechanical ͑QM͒ simulation gives an accurate oxide thickness. 6,[20][21][22][23][24][25][26][27][28] For thick oxide samples, the difference between the measured accumulation capacitance and oxide capacitance is very small because the semiconductor capacitance is significantly higher than the oxide capacitance. With decreasing oxide thickness, the effect of semiconductor capacitance on measured capacitance increases.…”

Section: Electrical Thickness By C -V and I -V Measurementmentioning

confidence: 99%

Measurement of the physical and electrical thickness of ultrathin gate oxides

Chang¹,

Yang²,

Hwang³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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To evaluate the reliability in measurements of the thickness of ultrathin gate oxides in the range of 2–9 nm, various techniques based on different methodologies were used for comparison. The physical thickness was determined with medium energy ion scattering spectroscopy (MEIS), high-resolution transmission electron microscopy (HRTEM), and spectroscopic ellipsometry (SE). The physical thickness was compared with the electrical thickness measured with current–voltage (I–V) and capacitance–voltage (C–V) measurements with quantum effect corrections. The physical thickness of amorphous SiO2 layers in the range of 2–9 nm determined with MEIS and HRTEM is in a good agreement with the corresponding electrical thickness from C–V and I–V measurements within 0.3 nm. For SE, which is the main technique used for in-line monitoring, we observed that it can be used for 2–9 nm ultrathin gate oxides but is more sensitive to the details of the oxide characteristics.

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“…This causes a quantum confinement phenomenon quantization of energy carriers at discrete levels. This is regarded as a 2D gas as mentioned by Scott et al [15].…”

Section: Resultsmentioning

confidence: 98%

Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

Hlali

Hizem

Kalboussi

2017

Физика И Техника Полупроводников

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In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal-Insulator-Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al 2 O 3 /Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi-Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C−V ), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device.

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Computationally efficient models for quantization effects in MOS electron and hole accumulation layers

Cited by 33 publications

References 9 publications

Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors

Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors

Measurement of the physical and electrical thickness of ultrathin gate oxides

Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

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