2021
DOI: 10.1038/s41524-021-00608-3
|View full text |Cite
|
Sign up to set email alerts
|

Computational synthesis of substrates by crystal cleavage

Abstract: The discovery of substrate materials has been dominated by trial and error, opening the opportunity for a systematic search. We generate bonding networks for materials from the Materials Project and systematically break up to three bonds in the networks for three-dimensional crystals. Successful cleavage reduces the bonding network to two periodic dimensions. We identify 4693 symmetrically unique cleavage surfaces across 2133 bulk crystals, 4626 of which have a maximum Miller index of one. We characterize the … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
7
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
3
2

Relationship

1
4

Authors

Journals

citations
Cited by 5 publications
(10 citation statements)
references
References 27 publications
0
7
0
Order By: Relevance
“…We show that flexoelectricity in bulk Mn 3 O 4 is subdued due to a destructive interference between the bending and shearing modes; whereas in monolayer and bilayer Mn 3 O 4 , the contribution of the shearing mode diminishes, leading to flexoelectric coefficients that are two orders of magnitude larger than other 2D materials such as MoS 2 . [ 16,25,26 ] Moreover, using a model based on clasical beam theory, we find an increasing activation of the bending mode with decreasing thickness of the oxide membranes, which further increases the flexoelectric response. We demonstrate the generation of voltages up to 6.24 V (peak to peak) using these exfoliated Mn 3 O 4 ‐membrane‐based FNGs from mechanical perturbations.…”
Section: Introductionmentioning
confidence: 82%
“…We show that flexoelectricity in bulk Mn 3 O 4 is subdued due to a destructive interference between the bending and shearing modes; whereas in monolayer and bilayer Mn 3 O 4 , the contribution of the shearing mode diminishes, leading to flexoelectric coefficients that are two orders of magnitude larger than other 2D materials such as MoS 2 . [ 16,25,26 ] Moreover, using a model based on clasical beam theory, we find an increasing activation of the bending mode with decreasing thickness of the oxide membranes, which further increases the flexoelectric response. We demonstrate the generation of voltages up to 6.24 V (peak to peak) using these exfoliated Mn 3 O 4 ‐membrane‐based FNGs from mechanical perturbations.…”
Section: Introductionmentioning
confidence: 82%
“…91 Recently, the work of cleavage of a monolayer ( E cleave ) in eqn (2), which is the energy required to cleave a unit area of a bulk material, and γ were used to evaluate the thermodynamic stability of cleaved monolayer surfaces to explore potential 2D flakes as well. 92 E slab,as-cut is the energy of the as-cut slab immediately after cleaving, which is different from the optimized one, E slab . E cleave = ( E slab,as-cut − nN bulk )/ A …”
Section: Predicting Properties By First-principles Calculationsmentioning
confidence: 99%
“…To determine which of these terminations is more likely to result from exfoliation, we calculated their surface energies (see Methods section for details). Surface energies have been shown to correlate well with the work of adhesion 30 , which is the energy per unit area required to cleave a crystal at a particular surface. This quantity is important for determining whether a non-van der Waals crystal, such as Mn3O4, can be mechanically exfoliated into few-layer structures.…”
Section: Introductionmentioning
confidence: 99%
“…The surface energies of the two (101) terminations are shown in Figure 1f for monolayer, bilayer, and bulk geometries of Mn3O4. The surface energy of two commonly used crystal substrates, (0001) ZnO and AlN, are included as references to show the feasibility for cleavage of Mn3O4 30 . The octahedral surface termination has a lower energy for all thicknesses tested here with the bilayer having the lowest energy, which is about the same as (0001) ZnO by 1 meV/Å 2 .…”
Section: Introductionmentioning
confidence: 99%