2022
DOI: 10.1016/j.surfin.2022.102193
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Computational study of intrinsic defects on the electronic properties and quantum capacitance of Sc2CF2 monolayer

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Cited by 2 publications
(2 citation statements)
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“…For 5d transition metal dopants, the maximum C Q is 1833.15 μF/cm 2 (0.48 V) in the Re-doped system. Cui et al also studied the geometry, electronic properties, and C Q of Sc 2 CF 2 with intrinsic defects [ 113 ]. They found that the C Q fluctuations are more pronounced for systems with defects.…”
Section: Research Progress Of 2d Electrode Materials For Edlcsmentioning
confidence: 99%
“…For 5d transition metal dopants, the maximum C Q is 1833.15 μF/cm 2 (0.48 V) in the Re-doped system. Cui et al also studied the geometry, electronic properties, and C Q of Sc 2 CF 2 with intrinsic defects [ 113 ]. They found that the C Q fluctuations are more pronounced for systems with defects.…”
Section: Research Progress Of 2d Electrode Materials For Edlcsmentioning
confidence: 99%
“…From the CA measurements, it is possible to calculate the surface free energy by using different methodologies. We have used the method based on the Young–Dupre theory that was later improved by van Oss, Chaudhury, and Good. More details of the method are found in the Supporting Information. In this work, the CA measurements were carried out at room temperature and ambient humidity using a pocket goniometer PG2 (FIBRO system) .…”
Section: Experimental Partmentioning
confidence: 99%