Computational simulation of threshold displacement energies of GaAs

Chen, Nanjun; Gray, Seán; Hernández–Rivera, Efraín; Huang, Danhong; LeVan, Paul D.; Gao, Fei

doi:10.1557/jmr.2017.46

Cited by 23 publications

(16 citation statements)

References 29 publications

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“…3). The obtained results fully agree with the data presented in the paper [10]. The total NIEL for GaAs is calculated by summing the contributions of each element weighted by its atomic fraction [11].…”

Section: Dual-channel Gaas-hemt Device Structure and Experimental Techniquesupporting

confidence: 87%

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Lovshenko

Voronov

Roshchenko

et al. 2022

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

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Section: Dual-channel Gaas-hemt Device Structure and Experimental Techniquesupporting

confidence: 87%

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Lovshenko

Voronov

Roshchenko

et al. 2022

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

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“…An important physical parameter for the NIEL determination is the threshold energy for displacement E d 0 , which corresponds to the minimum energy required for a recoil atom to displace a Ga or As atom from its lattice position. This value has been measured via X-ray diffraction 2 and estimated via molecular dynamics simulations 3 to be in the range E d 0 =9-13 eV.…”

Section: Introductionmentioning

confidence: 95%

Defect spectroscopy and non-ionizing energy loss analysis of proton and electron irradiated p-type GaAs solar cells

Pellegrino

Gagliardi

Zimmermann

2020

Journal of Applied Physics

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Admittance spectroscopy combined with non-ionizing energy loss (NIEL) analysis is shown to be a powerful tool for analyzing solar cell radiation degradation, not relying on the change of macroscopic cell parameters. GaAs component cells, representative of the middle sub-cell in Ga 0.5 In 0.5 P/GaAs/Ge solar cells, were irradiated with protons and electrons in the 0.5-3 MeV energy range. Four irradiation-induced defects are identified in the p-type base layer. The nature of each defect is assessed by analyzing the dependence of its introduction rate on the NIEL deposited by electrons in the semiconductor. The expected linear relationship is only achieved if a unique threshold energy E d is ascribed to each defect, which ranges from 9 to 38 eV. An electron NIEL with E d = 21 eV, customarily used for GaAs-based solar cell degradation analysis, is an approximation of the relative abundance of these four defects. The 21 eV value is thus a GaAs material-specific parameter, independent of the electrical device design. In addition, the type and energy of the incident particle is correlated with the relative abundance of high E d defects. The impact of each defect on the macroscopic electrical parameters of the cell, namely the open-circuit voltage V OC , the short-circuit current density J SC and the recombination current density J 02 , is assessed with the help of a Pearson analysis. The different effectiveness of electron and proton irradiation on parameters dominated by recombination in the depleted region, such as V OC or J 02 , is attributed in part to the influence of the particle recoil spectra on the defect capture cross-section.

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“…Gold (A=197) allows only 70/197 ∼ 1/3 the energy transfer, which is small enough at all of the accelerating voltages used in these experiments that the displacement or knock-on damage in this material is negligible. But the displacement damage threshold energy in GaAs is ∼ 10 eV [1,[36][37][38] (although with substantial uncertainty -see Ref. [38] and references within), which leads us to expect an onset of electron beam-induced displacement damage between the accelerating voltages of 200 and 300 kV.…”

mentioning

confidence: 99%

“…But the displacement damage threshold energy in GaAs is ∼ 10 eV [1,[36][37][38] (although with substantial uncertainty -see Ref. [38] and references within), which leads us to expect an onset of electron beam-induced displacement damage between the accelerating voltages of 200 and 300 kV.…”

mentioning

confidence: 99%

“…7 e2). Notably, since the displaced atom of a VI defect can travel only a few angstroms from its original position at these low energies, and likely in the direction of the electron beam, the yellow cross marks the final location of this single defect [1,38]. Thus the defect generation volume is much smaller than the e-h generation volume, and EBIC imaging is able to locate VI insertion events with a much higher precision (< 1 nm) than its electronic resolution of ≈ 10 nm.…”

mentioning

confidence: 99%

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Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions

Zutter,

Kim,

Hubbard

et al. 2020

Preprint

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Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy (STEM) electron beam-induced current (EBIC) imaging to map electronic defects in a GaAs nanowire Schottky diode. Imaging with a non-damaging 80 or 200 kV STEM acceleration potential reveals a minority-carrier diffusion length that decreases near the surface of the hexagonal nanowire, thereby demonstrating that the device's charge collection efficiency (CCE) is limited by surface defects. Imaging with a 300 keV STEM beam introduces vacancy-interstitial (VI, or Frenkel) defects in the GaAs that increase carrier recombination and reduce the CCE of the diode. We create, locate, and characterize a single insertion event, determining that a defect inserted 7 nm from the Schottky interface broadly reduces the CCE by 10% across the entire nanowire device. Variable-energy STEM EBIC imaging thus allows both benign mapping and pinpoint modification of a device's e-h recombination landscape, enabling controlled experiments that illuminate the impact of both extended (1D and 2D) and point (0D) defects on semiconductor device performance.

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Computational simulation of threshold displacement energies of GaAs

Abstract: Abstract

Cited by 23 publications

References 29 publications

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Defect spectroscopy and non-ionizing energy loss analysis of proton and electron irradiated p-type GaAs solar cells

Mapping Charge Recombination and the Effect of Point Defect Insertion in Gallium Arsenide Nanowire Heterojunctions

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