2021
DOI: 10.1016/j.jlumin.2020.117705
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Computational simulation and crystal field analysis of the Eu3+-doped LiF

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Cited by 12 publications
(4 citation statements)
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“…To better understand the influence of A-site Cr-MOF groups on the charge-carrier transport properties of Cr-MOF perovskite, the crystal field splitting energy (CFSE) Δ 0 was calculated using density functional theory (DFT) based on the ligand field theory (Figure 1b). [25,26] We considered the A-site Cr-MOF to consist of a regular array of positively charged Cr 3+ metal ions surrounded by organic "linker" molecules, i.e., two TPy organic groups as ligand. The metal ions form nodes that bind the arms of the linkers together, forming a repeating cross-like structure where N atoms provide lone-pair electrons and Cr 3+ ions contribute the empty orbitals, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…To better understand the influence of A-site Cr-MOF groups on the charge-carrier transport properties of Cr-MOF perovskite, the crystal field splitting energy (CFSE) Δ 0 was calculated using density functional theory (DFT) based on the ligand field theory (Figure 1b). [25,26] We considered the A-site Cr-MOF to consist of a regular array of positively charged Cr 3+ metal ions surrounded by organic "linker" molecules, i.e., two TPy organic groups as ligand. The metal ions form nodes that bind the arms of the linkers together, forming a repeating cross-like structure where N atoms provide lone-pair electrons and Cr 3+ ions contribute the empty orbitals, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Referring to the research on nonequilibrium valence doping, the cationic vacancy of the matrix crystal is a good charge compensation mechanism. [32,[39][40][41][42] Here, Li vacancy ([V Li ] − ) was selected as the charge compensation mechanism of [Th Li ] 3+ substitution defect, and according to the spatial orientation relationship between Li vacancy and Th ion, we excluded some equivalent defect configurations and constructed five 3[V Li ] − -[Th Li ] 3+ defect cluster models. In addition, the charge compensation mechanisms related to interstitial F ([F in ] − ) were also considered.…”
Section: Defect Models and Calculation Detailsmentioning
confidence: 99%
“…Although this type of defect is unusual, it is predicted to be the most probable in some materials. [41][42][43] Furthermore, in some oxides the results are not sufficient to determine whether the disorder is Frenkel or anti-Schottky. 44,45 Here, the formation of anti-Schottky defect may be favoured by the presence of interstitial pores in the crystal structure.…”
Section: Schemesmentioning
confidence: 99%
“…4). There are materials that present a negative value of the solution energy (intrinsic 42 and extrinsic 48,49 defect formation energy), wherein the formation of interstitial oxygen defects, e.g., is favoured by increasing the partial pressure of oxygen. [50][51][52][53][54] Indeed, these results are in agreement with studies…”
Section: Schemesmentioning
confidence: 99%