2019
DOI: 10.1109/ted.2019.2900691
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Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar Cells

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Cited by 16 publications
(7 citation statements)
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“…Simulation has been used for the optimization of parameters in energy [21], [22], transportation [23]- [25], heat transfer [26]- [28], production planning [29], water, and food production [6], [30]. Numerical simulation has also been employed in improving the properties of solar cells [14], [31], [32].…”
Section: Numerical Modeling and Materials Parametersmentioning
confidence: 99%
“…Simulation has been used for the optimization of parameters in energy [21], [22], transportation [23]- [25], heat transfer [26]- [28], production planning [29], water, and food production [6], [30]. Numerical simulation has also been employed in improving the properties of solar cells [14], [31], [32].…”
Section: Numerical Modeling and Materials Parametersmentioning
confidence: 99%
“…Based on the observation that tunneling and pinhole transport may coexist and could both potentially be the dominant means of transport depending on the SiO x film properties such as thickness, , a model superposing the two mechanisms was proposed, which can explain experimentally determined J 0 and ρ c values for various types of poly-Si passivating contacts . Subsequently, this combined model was refined and implemented by various groups for investigating, predicting, and optimizing the properties of poly-Si passivating contacts. While these implementations are powerful tools, they still rely on a few simplifying assumptions. One common assumption of the models implemented is that the diffused region in the substrate is homogeneous. However, process simulation studies have shown for both phosphorus (P)- and boron (B)-doped poly-Si passivating contacts that local enhancement of dopant diffusion is expected in the substrate under the pinholes, as depicted schematically in Figure . , …”
Section: Introductionmentioning
confidence: 99%
“…Subsequently, this combined model was refined and implemented by various groups for investigating, predicting, and optimizing the properties of poly-Si passivating contacts. While these implementations are powerful tools, they still rely on a few simplifying assumptions. One common assumption of the models implemented is that the diffused region in the substrate is homogeneous. However, process simulation studies have shown for both phosphorus (P)- and boron (B)-doped poly-Si passivating contacts that local enhancement of dopant diffusion is expected in the substrate under the pinholes, as depicted schematically in Figure . , …”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, the increase in material quality, particularly during cell processing or crystallization process, has now contributed to the demonstration of efficiencies up to 22 % [6]. On the other hand, mc-Si on oxide junction passivating contacts have been demonstrated as selective carrier contacts for Si-based solar cells with high-efficiency [7]. mc-Si wafers have become the pillar of the PV market owing to their lower cost, availability, enhanced quality of wafers, and understanding of how to convert them into highly efficient solar cells.…”
Section: Introductionmentioning
confidence: 99%