Passivating contacts consisting of
heavily doped polycrystalline
silicon (poly-Si) and ultrathin interfacial silicon oxide (SiO
x
) films enable the fabrication of high-efficiency
Si solar cells. The electrical properties and working mechanism of
such poly-Si passivating contacts depend on the distribution of dopants
at their interface with the underlying Si substrate of solar cells.
Therefore, this distribution, particularly in the vicinity of pinholes
in the SiO
x
film, is investigated in this
work. Technology computer-aided design (TCAD) simulations were performed
to study the diffusion of dopants, both phosphorus (P) and boron (B),
from the poly-Si film into the Si substrate during the annealing process
typically applied to poly-Si passivating contacts. The simulated 2D
doping profiles indicate enhanced diffusion under pinholes, yielding
deeper semicircular regions of increased doping compared to regions
far removed from the pinholes. Such regions with locally enhanced
doping were also experimentally demonstrated using high-resolution
(5–10 nm/pixel) scanning spreading resistance microscopy (SSRM)
for the first time. The SSRM measurements were performed on a variety
of poly-Si passivating contacts, fabricated using different approaches
by multiple research institutes, and the regions of doping enhancement
were detected on samples where the presence of pinholes had been reported
in the related literature. These findings can contribute to a better
understanding, more accurate modeling, and optimization of poly-Si
passivating contacts, which are increasingly being introduced in the
mass production of Si solar cells.