2021
DOI: 10.1016/j.apsusc.2021.149959
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Computational modeling of electrolytic deposition of a single-layer silicon film on silver and graphite substrates

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Cited by 9 publications
(8 citation statements)
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“…According to the thermal analysis data, the melting point of the investigated salt melt should be 858 K [12]. The melting temperature of the melt model, established in [13] from the dramatic break in the temperature dependence of the potential (and total) energy of the considered salt melt, was 847 K. The authenticity of this value is confirmed by a detailed analysis of the melt structure and calculated values of the diffusion coefficients.…”
Section: Introductionmentioning
confidence: 79%
See 1 more Smart Citation
“…According to the thermal analysis data, the melting point of the investigated salt melt should be 858 K [12]. The melting temperature of the melt model, established in [13] from the dramatic break in the temperature dependence of the potential (and total) energy of the considered salt melt, was 847 K. The authenticity of this value is confirmed by a detailed analysis of the melt structure and calculated values of the diffusion coefficients.…”
Section: Introductionmentioning
confidence: 79%
“…The interaction of atoms in the substrate was described by the Tersoff potential [35]. Interaction of Si 4+ ion in molten salt was described by the LJ potential with the Coulomb term and the interaction between silicon and melt components as well as the interaction of silicon or salt melt with a graphite substrate were represented by the LJ potential [13]. To determine the parameters of the L-J potential of the Si-halogen and C-halogen, the Berthelot-Lorentz rule was used.…”
Section: Methodsmentioning
confidence: 99%
“…To a certain extent, the m number represents the rotational symmetry in the packing of atoms [50] . The value m =4 is often found in regular packings, while m =5 is typical for liquid and disordered systems [51] . However, in this case, such interpretation may be incorrect due to the contribution of small geometric elements caused small‐scale thermal fluctuations.…”
Section: Resultsmentioning
confidence: 99%
“…The time of 30 ps for the appearance of a new Si 4+ ion was chosen empirically when simulating the electrolytic deposition of silicon on silver and graphite substrates. 27 As a rule, at least 2/3 of this time the Si 4+ ion spent on the passage of the melt, and the rest of the time was spent on finding a settled place on the substrate. The time of appearance of a new C 4+ ion in the system was also selected empirically: firstly, the computer time of one calculation should be minimal; secondly, the Si 4+ and C 4+ ions should not be associated in the melt, forming clusters in the melt, which hindered the formation of a silicon carbide film on the surface.…”
Section: Deposition Processmentioning
confidence: 99%
“…26, the Monte Carlo method was used to study the structural development of amorphous and nanoporous carbon, silicon, and silicon carbide. In, 27,28 thin films of pure silicon were obtained by molecular dynamics modeling of electrodeposition from KF-KCl-KI melt. A detailed structural analysis of the obtained films was performed.…”
Section: Introductionmentioning
confidence: 99%