Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Arkani, Reza; Broderick, Christopher A.; O’Reilly, Eoin P.

doi:10.1109/nano.2018.8626250

Cited by 2 publications

(10 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To facilitate comparison to experiment we perform SE calculations at a fixed carrier density n = 10 15 cm −3 per QW, a low value selected to replicate a typical carrier density associated with optical excitation in the PL measurements for the structures under investigation. Full details of the theoretical model-which is based upon that we have previously developed to analyse the properties of 1.3 µm metamorphic QW lasers, as well as near-and mid-infrared dilute bismide QW lasers [27][28][29][30]-will be presented in [31]. We assume ideal, compressively strained InAs 1−x Sb x QWs of thickness 10.5 nm, surrounded by unstrained Al 0.125 In 0.875 As barriers.…”

Section: Theoretical Modelmentioning

confidence: 99%

“…Extending the emission wavelength beyond 4 µm would then require careful QW design and optim isation. For example, via incorporation of nitrogen (N) to form dilute nitride InN z (As 1−x Sb x ) 1−z QWs, where the band anti-crossing interaction associated with N impurity states brings about a simultaneous reduction of the band gap and lattice constant [38,39], allowing increased flexibility via strain engineering and allowing for the design of metamorphic type-I QWs having large CB offsets and emission wavelengths 4 µm [31,40].…”

Section: Structurementioning

confidence: 99%

“…Extending the emission wavelength beyond 4 µm is then likely to require careful QW design and optimisation. 30,33 The left-and right-hand panels of Fig. 2(c) respectively show the calculated VB structure and density of states (DOS) for structures MQW1 (dashed red lines) and MQW4 (solid blue lines) of Table I.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Optical properties of metamorphic type-I InAs_1−xSb_x/Al_yIn_1−yAs quantum wells grown on GaAs for the mid-infrared spectral range

Repiso

Broderick

Mata

et al. 2019

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

We analyse the optical properties of InAs1−xSbx/AlyIn1−yAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlyIn1−yAs metamorphic buffer layers (MBLs) using GaAs substrates. The use of AlyIn1−yAs MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 µm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature emission up to 3.4 µm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8band k·p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Our results highlight the potential of type-I InAs1−xSbx/AlyIn1−yAs metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of mid-infrared light-emitting diodes.

show abstract

Section: Theoretical Modelmentioning

confidence: 99%

Section: Structurementioning

confidence: 99%

See 1 more Smart Citation

Optical properties of metamorphic type-I InAs_1−xSb_x/Al_yIn_1−yAs quantum wells grown on GaAs for the mid-infrared spectral range

Repiso

Broderick

Mata

et al. 2019

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Before proceeding, we emphasise the link between Eqs. (10) and (11) and the widely employed Kane model for BTBT in a direct-gap semiconductor. 39,40 Given Kane's use of a semi-classical wave function phase in his analysis of BTBT, his approximate result for T (and hence G) is formally equivalent to Eqs.…”

Section: B Btbt Transmission Coefficient and Generation Ratementioning

confidence: 99%

“…39,40 Given Kane's use of a semi-classical wave function phase in his analysis of BTBT, his approximate result for T (and hence G) is formally equivalent to Eqs. (10) and (11). 41 Indeed, Kane's analytical result for T can be straightforwardly obtained from Eq.…”

Section: B Btbt Transmission Coefficient and Generation Ratementioning

confidence: 99%

Impact of band-anticrossing on band-to-band tunneling in highly-mismatched semiconductor alloys

Das¹,

Broderick²,

O’Reilly³

2021

Preprint

Self Cite

View full text Add to dashboard Cite

We theoretically analyse band-to-band tunneling (BTBT) in highly-mismatched, narrow-gap dilute nitride and bismide alloys, and quantify the impact of the N-or Bi-induced perturbation of the band structure -due to band-anticrossing (BAC) with localised impurity states -on the electric field-dependent BTBT generation rate. For this class of semiconductors the assumptions underpinning the widely-employed Kane model of direct BTBT break down, due to the strong band edge nonparabolicity resulting from BAC interactions. Via numerical calculations based on the Wentzel-Kramers-Brillouin approximation we demonstrate that BAC leads, at fixed band gap, to reduced (increased) BTBT current at low (high) applied electric fields compared to that in a conventional InAs 1−x Sb x alloy. Our analysis reveals that BTBT in InN x As 1−x and InAs 1−x Bi x is governed by a field-dependent competition between the impact of N (Bi) incorporation on (i) the dispersion of the complex band linking the valence and conduction bands, which dominates at low field strengths, and (ii) the conduction (valence) band edge density of states, which dominates at high field strengths. The implications of our results for applications in avalanche photodiodes and tunneling field-effect transistors are discussed.

show abstract

Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Cited by 2 publications

References 8 publications

Optical properties of metamorphic type-I InAs_1−xSb_x/Al_yIn_1−yAs quantum wells grown on GaAs for the mid-infrared spectral range

Optical properties of metamorphic type-I InAs_1−xSb_x/Al_yIn_1−yAs quantum wells grown on GaAs for the mid-infrared spectral range

Impact of band-anticrossing on band-to-band tunneling in highly-mismatched semiconductor alloys

Contact Info

Product

Resources

About

Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Cited by 2 publications

References 8 publications

Optical properties of metamorphic type-I InAs1−xSbx/Aly In1−y As quantum wells grown on GaAs for the mid-infrared spectral range

Optical properties of metamorphic type-I InAs1−xSbx/Aly In1−y As quantum wells grown on GaAs for the mid-infrared spectral range

Impact of band-anticrossing on band-to-band tunneling in highly-mismatched semiconductor alloys

Contact Info

Product

Resources

About

Optical properties of metamorphic type-I InAs_1−xSb_x/Al_yIn_1−yAs quantum wells grown on GaAs for the mid-infrared spectral range

Optical properties of metamorphic type-I InAs_1−xSb_x/Al_yIn_1−yAs quantum wells grown on GaAs for the mid-infrared spectral range