Compressive stress of thin cubic BN films prepared by r.f. reactive sputtering on r.f.-biased substrates

Goranchev, B.; Schmidt, Klaus; Reichelt, K.

doi:10.1016/0040-6090(87)90256-2

Cited by 24 publications

(3 citation statements)

References 5 publications

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“…6(a) and 6(b) are estimated to be −0.38 GPa and 2.3 GPa, respectively (minus sign means tensile stress). These values are calculated by the bending beam method 30) using substrate bending, a Young's modulus of 1.217 × 10 11 Pa and a Poisson's ratio of 0.279 for Si. 31) Internal stress accumulates in a film when it is irradiated by energetic ions.…”

Section: Resultsmentioning

confidence: 99%

Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

Wakatsuchi¹,

Takaba²,

scshapeKanai³

et al. 1999

Jpn. J. Appl. Phys.

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Boron nitride (BN) films with a high cubic phase content have been synthesized. The films are deposited by reactive sputtering of a pure boron target in electron cyclotron resonance (ECR) plasmas and ion bombardment to a substrate is enhanced by rf biassing of the substrate. A cubic phase of BN is grown over a certain threshold value of ion bombardment energy. The threshold and the cubic phase content depend on the ratio of ion flux to boron atom flux to the substrate. The threshold decreases as the ratio increases; however, the cubic phase content also decreases, particularly in a high ion flux region. BN films with a high cubic phase content show surface cracking and delamination because of the high compressive stress induced by ion bombardment. An intermediate hexagonal BN layer, of a certain thickness between layer with high cubic phase content and the substrate prevents surface cracking and improves film adhesion.

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Section: Resultsmentioning

confidence: 99%

Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

Wakatsuchi¹,

Takaba²,

scshapeKanai³

et al. 1999

Jpn. J. Appl. Phys.

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“…The curvature was measured by a surface profilometer (DEKTAK 3030) with a stylus tracking force of 10 mgf. The stress is given by the following equation (8) . where s is the film stress, E s is Young's modulus of the substrate, ν is Poisson's ratio of the substrate, d s is the substrate thickness, d f is the film thickness, l is the measuring length, and δ is the bend of a sample between the measuring length.…”

Section: ) Stressmentioning

confidence: 99%

OS13F056 Measurement of Residual Stress in BN Films Prepared by Dual Ion Beam Sputtering Method

Kobayashi

Valizadeh

Colligon

et al. 2011

ATEM

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Influence of ion/atom arrival ratio and ion energy on residual stress of BN films were investigated using the dual ion beam sputtering (DIBS) method. The dual ion beam deposition system comprises two Kaufman type ion sources. The sputtering ion source, which is directed to a target, can provide an ion beam at a selected energy in the range of 1000-1500 eV and a current density of 0.5-1.5 mA/cm 2 . The assisting ion source having two grids provides an ion beam at a selected energy in a range of 100-800 eV and a current density of ~ 100 μA/cm 2 . The internal stress was estimated by a bending method. A coated silicon substrate has curvature caused by the deposition. The curvature was measured by a surface profilometer with a stylus tracking force of 10 mgf. RBS analysis was conducted with 4 2He + ions as the projectile which were extracted from a 2 MeV Van de Graaff accelerator, with a total scattering angle of 168° and a beam incident angle to the substrate normal or 60 deg, so that the composition of the prepared BN thin films including Ar content was measured. With regard to the influence of the ion/B arrival ratio on the stress of BN films, it was found that (a) the Ar content increased to 8 at.% with increasing ion/B arrival ratio, whereas (b) the stress of the BN films increased to around 3.8 MPa at an ion/B arrival ratio of 0.75,then decreased with the increase of the ion/B arrival ratio. It has been suggested that the increase of stress at lower ion/B arrival ratios could be caused by lattice strain produced by the change of composition and crystal structure from boron to BN, and after the composition and crystal structure reach BN, excess energy may be used to create Ar and N 2 bubbles, resulting in stress relief. From a series of experiments varying the ion energy from 300 to 850 eV keeping others constant, it was found that the Ar content and stress of the BN films decreased with increasing ion energy. It has been suggested that the decrease is due to the annealing effect by supplying higher energy.

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“…The boron can be obtained by electron beam evaporation (Murukawa et al 1991;Wada & Yamashita 1992;Kester & Messier 1992;Ikeda 1992), excimer laser ablation (Doll et al 1991), ion beam assisted sputtering (Shimokawa et al 1985) and r.f. diode sputtering (Goranchev et al 1987;Mieno & Yoshida 1990). The ionised nitrogen was obtained by low (Kester & Messier 1992;Anadoh et al 1988) and high (Murukawa et al 1991) energy ion beams, r.f.…”

Section: Cubic Boron Nitride Coatingsmentioning

confidence: 99%

A comparative machining study of diamond-coated tools made by plasma torch, microwave, and hot filament techniques

Bauer

Inspektor

Oles

2003

Sadhana

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An effective metal-cutting tool is usually a combination of a hard coating and a tough substrate. The successful deposition of diamond outside its thermodynamic stability range has stimulated the development of a new class of cutting tools: those with diamond-coated inserts of any desired style and edge geometry. The successful implementation of diamond coatings also expedited similar research in the deposition of cubic boron nitride. This paper presents superhard coating tools, with emphasis on diamond-coated WC-Co tools, the corresponding deposition of technologies and the foreseen metal-cutting applications.

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Compressive stress of thin cubic BN films prepared by r.f. reactive sputtering on r.f.-biased substrates

Cited by 24 publications

References 5 publications

Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

Ion Bombardment Effects on Boron Nitride Film Synthesis by Reactive Sputtering with Electron Cyclotron Resonance Plasmas

OS13F056 Measurement of Residual Stress in BN Films Prepared by Dual Ion Beam Sputtering Method

A comparative machining study of diamond-coated tools made by plasma torch, microwave, and hot filament techniques

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