Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing

Bhattacharjee, Abhiroop; Nguyen, Thanh Chien; Pachauri, Vivek; Ingebrandt, Sven; Vu, Xuan Thang

doi:10.3390/mi12010039

Cited by 5 publications

(7 citation statements)

References 34 publications

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“…[ 15 ] Unlike the conventional planar gate electrode, the adsorbed (functional) small molecules play the role of a local gate through which the potential at the FET channel‐electrolyte interface can be conveniently regulated. [ 16 ] Although other free‐charged molecules (or ions) exist in the solution, they can be electrostatically screened by the electric double layer at the electrode surface when electrolyte‐contained buffer solutions are used. [ 17 ] This screening effect is associated with the electrolyte concentration, where a higher concentration results in a smaller Debye length (λ D ).…”

Section: Single‐molecule Electrical Testing Techniquesmentioning

confidence: 99%

Single‐Molecule Electrical Profiling of Peptides and Proteins

Ju,

Cheng,

et al. 2024

Advanced Science

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In recent decades, there has been a significant increase in the application of single‐molecule electrical analysis platforms in studying proteins and peptides. These advanced analysis methods have the potential for deep investigation of enzymatic working mechanisms and accurate monitoring of dynamic changes in protein configurations, which are often challenging to achieve in ensemble measurements. In this work, the prominent research progress in peptide and protein‐related studies are surveyed using electronic devices with single‐molecule/single‐event sensitivity, including single‐molecule junctions, single‐molecule field‐effect transistors, and nanopores. In particular, the successful commercial application of nanopores in DNA sequencing has made it one of the most promising techniques in protein sequencing at the single‐molecule level. From single peptides to protein complexes, the correlation between their electrical characteristics, structures, and biological functions is gradually being established. This enables to distinguish different molecular configurations of these biomacromolecules through real‐time electrical monitoring of their life activities, significantly improving the understanding of the mechanisms underlying various life processes.

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Section: Single‐molecule Electrical Testing Techniquesmentioning

confidence: 99%

Single‐Molecule Electrical Profiling of Peptides and Proteins

Ju,

Cheng,

et al. 2024

Advanced Science

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“…The SiNW-FET is set at a fixed working point, and a small sinusoidal signal, 5–10 mV, is added to its gate electrode. The binding of biomolecules on the gate oxide causes a change in its effective gate capacitance and resistance of the SiNW-FET [ 8 , 41 , 46 , 47 ]. The change of the input impedance results in a change in its frequency response.…”

Section: Sinw-fet Biosensormentioning

confidence: 99%

“…As a solution to the fluidic integration of the reference electrode, the realization of an on-chip reference electrode would reduce sensor-to-sensor variations. The reference electrode position is of major importance, particularly for the AC readout, since the resistance of the analyte has an impact on the recorded spectra [ 8 , 46 , 47 ]. Several approaches for on-chip pseudo-reference electrodes have been investigated.…”

Section: System Integrationmentioning

confidence: 99%

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Tintelott

Pachauri

Ingebrandt

et al. 2021

Sensors

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Silicon nanowire field-effect transistors (SiNW-FET) have been studied as ultra-high sensitive sensors for the detection of biomolecules, metal ions, gas molecules and as an interface for biological systems due to their remarkable electronic properties. “Bottom-up” or “top-down” approaches that are used for the fabrication of SiNW-FET sensors have their respective limitations in terms of technology development. The “bottom-up” approach allows the synthesis of silicon nanowires (SiNW) in the range from a few nm to hundreds of nm in diameter. However, it is technologically challenging to realize reproducible bottom-up devices on a large scale for clinical biosensing applications. The top-down approach involves state-of-the-art lithography and nanofabrication techniques to cast SiNW down to a few 10s of nanometers in diameter out of high-quality Silicon-on-Insulator (SOI) wafers in a controlled environment, enabling the large-scale fabrication of sensors for a myriad of applications. The possibility of their wafer-scale integration in standard semiconductor processes makes SiNW-FETs one of the most promising candidates for the next generation of biosensor platforms for applications in healthcare and medicine. Although advanced fabrication techniques are employed for fabricating SiNW, the sensor-to-sensor variation in the fabrication processes is one of the limiting factors for a large-scale production towards commercial applications. To provide a detailed overview of the technical aspects responsible for this sensor-to-sensor variation, we critically review and discuss the fundamental aspects that could lead to such a sensor-to-sensor variation, focusing on fabrication parameters and processes described in the state-of-the-art literature. Furthermore, we discuss the impact of functionalization aspects, surface modification, and system integration of the SiNW-FET biosensors on post-fabrication-induced sensor-to-sensor variations for biosensing experiments.

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“…2,3 Thus, changes in the length, diameter, and spacing of SiNWs developed after the etching process reveal improvement of material properties, such as light absorption and scattering, 4 enhancement of surface built-in-field, 5,6 electron−hole recombination, 4 quantum confinement, 7 and so forth. This leads to the enhanced application in photodetectors, 8−12 photovoltaics 13 high sensitivity sensors, 14,15 field-effect-transistors, 16,17 thermoelectric devices, 18 super capacitors, 19 and so on. Single-crystalline SiNWs can be synthesized via reactive-ion-etching (RIE) 20 or vapor−liquid−solid (VLS) 21 methods in gas phase and metalassisted chemical etching (MACE) in the solution process.…”

Section: Introductionmentioning

confidence: 99%

“…One dimensional (1-D) SiNWs have enhanced light absorption capability and received increasing research interest because of their higher surface-to-volume ratio, strong light trapping effect, fast charge transport, and high charge collection efficiency by shortening the carrier transport path in comparison to bulk Si. , Thus, changes in the length, diameter, and spacing of SiNWs developed after the etching process reveal improvement of material properties, such as light absorption and scattering, enhancement of surface built-in-field, , electron–hole recombination, quantum confinement, and so forth. This leads to the enhanced application in photodetectors, − photovoltaics high sensitivity sensors, , field-effect-transistors, , thermoelectric devices, super capacitors, and so on. Single-crystalline SiNWs can be synthesized via reactive-ion-etching (RIE) or vapor–liquid–solid (VLS) methods in gas phase and metal-assisted chemical etching (MACE) in the solution process.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowire Arrays with Nitrogen-Doped Graphene Quantum Dots for Photodetectors

Mondal

Dey

Basori

2021

ACS Appl. Nano Mater.

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A significantly improved silicon nanowire (SiNW)based broadband photodetector is obtained in this work using the core−shell structure of SiNWs with hydrothermally processed nitrogen doped graphene quantum dots (N-GQDs). The performance of the photodetector device is enhanced significantly by enlarging the effective surface area of the SiNW/N-GQD heterostructure by controlled KOH etching of SiNWs. In combination with SiNWs, low-cost hydrothermal processed N-GQDs are used as a light absorber in the UV region and also as an emitter in the visible region which is reabsorbed by the SiNWs to enhance the device performance. The SiNW/N-GQD heterostructure photodetector exhibits a large photocurrent to dark-current ratio (∼0.8 × 10 2 under zero bias and as high as ∼0.5 × 10 4 under −2 V bias for 2 min KOH etching), remarkably low dark current (∼55 nA under −2 V bias for 2 min KOH etching and is six orders lower compared to control SiNWs device), and significantly improved external quantum efficiency (EQE) exceeding 150% in the near IR and ∼500% at 460 nm wavelength in the visible region. Such higher EQE may arise due to the (i) enhanced optical absorption, (ii) suppressed dark current, (iii) photomultiplication of charge carriers because of the presence of trap states, and (iv) improved carrier transport and collection efficiency due to core−shell structure and nanoscale morphology control. It is expected that the reported SiNWs/N-GQDs core−shell heterostructure device might be useful for high-performance optoelectronic applications in the near future.

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Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing

Cited by 5 publications

References 34 publications

Single‐Molecule Electrical Profiling of Peptides and Proteins

Single‐Molecule Electrical Profiling of Peptides and Proteins

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Silicon Nanowire Arrays with Nitrogen-Doped Graphene Quantum Dots for Photodetectors

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