Abstract:Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to data security. In this paper, we investigate their vulnerability against Side Channel Attack (SCA). We assume that the adversary can monitor the supply current of the memory array consumed during read/write operation… Show more
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