Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission

Abstract

To mitigate the green gap problems existing in GaN/InGaN/AlGaN system on sapphire substrate, an In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN based LED structure on ScAlMgO4 (0001) substrate has been introduced for green light (525…565 nm) emission. On ScAlMgO4 (0001) substrate, 35% of In composition with 1.6 nm well thickness and only 15% of Al composition with 1.1 nm thick AlGaN as capping layer on top provide the best LED structure. It provides minimum equivalent lattice mismatch (0.01%) with reasonable overall elastic energy value (0.47 J/m2). Most importantly, it provides at least 10% brighter green light emission than that of sapphire based LED structure.

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“…The following research areas in the field of microelectronics, which are also covered by SPQEO: diamond films [29, 30], oxides films [31][32][33][34][35][36], and light emitting diodes [37][38][39][40][41], should be pointed out as well.…”

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“…Our strategy for the next decade included theoretical consideration of new effects in low-dimensional semiconductor structures [7][8][9][10], establishment of new principles and approaches to create and study functionality of lasers and LEDS [11][12][13][14][15][16][17][18], clarification of some peculiarities in new hetero-and hybrid structures [19][20][21], application of sensor and photovoltaic cells [22][23][24][25][26][27], use of semiconductor, optic and quantum electronic devices in ecology, communications, renewable energetics and health care [28][29][30][31][32][33][34][35][36][37].…”