Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

Gu, Wen; Liu, Zhibin; Guo, Yanan; Wang, Xiaodong; Jia, Xiaolong; Liu, Xingfang; Zeng, Yiping; Wang, Junxi; Li, Jinmin; Yan, Jianchang

doi:10.1088/1674-4926/41/12/122802

Cited by 11 publications

(11 citation statements)

References 26 publications

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“…To date, several groups, including ours, have reported the fabrication of FFA Sp-AlN. [34][35][36][37][38] Most have utilized an Al metal target for the sputtering deposition. In addition, we have reported that controlling the polarity of the FFA Sp-AlN by using different target materials is possible.…”

Section: Overview Of Ffa Sp-alnmentioning

confidence: 99%

“…Moreover, the final crystalline quality of the FFA Sp-AlN strongly depends also on the initial crystalline quality of Sp-AlN, which is determined by sputtering deposition conditions (e.g. substrate temperature, chamber pressure, and sputtering gas species) 38,43) and AlN film thickness. 23,25,35,36,39,40) The influence of the sputtering deposition conditions, film thickness, and annealing conditions on the crystallinity of FFA Sp-AlN are discussed in the next section.…”

Section: Overview Of Ffa Sp-alnmentioning

confidence: 99%

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Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs

Uesugi

Miyake

2021

Jpn. J. Appl. Phys.

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AlN templates fabricated via a combination of sputtering deposition and post-deposition high-temperature face-to-face annealing can be applied to deep-ultraviolet (DUV) light-emitting devices because of their extremely low threading dislocation density (TDD) despite their low-cost and simple fabrication process. First, this paper summarizes the overview and essential crystalline characteristics of the face-to-face annealed sputter-deposited AlN template (FFA Sp-AlN). Thereafter, recent progress in the TDD reduction of the FFA Sp-AlN and the metalorganic vapor phase epitaxy of AlN and Al x Ga1−x N on the FFA Sp-AlN have been reviewed. The TDD of approximately 4 × 107 cm−2 was obtained on the sapphire substrates with an AlN film thickness of 1.2 μm. Finally, the potential of the low-TDD FFA Sp-AlN has been discussed by demonstrating the performances of DUV light-emitting diodes fabricated on the FFA Sp-AlN.

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Section: Overview Of Ffa Sp-alnmentioning

confidence: 99%

Section: Overview Of Ffa Sp-alnmentioning

confidence: 99%

Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs

Uesugi

Miyake

2021

Jpn. J. Appl. Phys.

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“…The background pressure of the sputtering chamber was below 3.2 × 10 –5 Pa. Two kinds of working gases were employed for comparation: pure N 2 or N 2 –O 2 gas mixture. The N 2 flow rate was set to 100 sccm, which was low to ensure a longer mean free path of particles and less tilt component of AlN . As for the latter, 1 sccm O 2 was supplied throughout the sputtering process and meant to regulate the polarity.…”

Section: Methodsmentioning

confidence: 99%

“…The N 2 flow rate was set to 100 sccm, which was low to ensure a longer mean free path of particles and less tilt component of AlN. 27 As for the latter, 1 sccm O 2 was supplied throughout the sputtering process and meant to regulate the polarity. The deposition rates were similar (∼0.21 nm/s) due to the negligible effect of trace O 2 on the yield and the collision possibility of the ejected Al particles.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Zhang

Guo

Cai

et al. 2023

Crystal Growth & Design

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In this study, we demonstrated AlN films with unexpected N-polarity on Si-face 4H−SiC substrates using RF reactive magnetron sputtering and post high-temperature annealing (HTA). It is found that HTA-AlN sputtered with pure nitrogen or mixed gases of nitrogen and trace oxygen exhibits undoubtable N polarity, which appears to contradict the common assumption of Al-polar AlN on Si-face SiC. The interfacial studies of HTA-AlN sputtered with pure N 2 reveal that the naturally oxidized SiC surface induces the formation of Si−O�Al−N bonds rather than conventional Si�N−Al bonds, thereby causing N-polar AlN. Sputtering with the mixed gases results in 5 nm thick complex transition layers at the AlN/SiC interface, including two types of oxygen-participated energy-unstable inversion domain boundaries and multiple polarity inverted AlN layers. Compared to that sputtered with the mixed gases, the N-polar HTA-AlN film sputtered with pure nitrogen presents a smoother surface morphology for the absence of AlON islands and lower threading dislocation density due to closer X-ray rocking curve full widths at half-maximum for (0002) and (101̅ 2) reflections. This work proves a new approach to prepare high-quality N-polar AlN/SiC templates for Al-rich AlGaN-based N-polar optoelectronic and power devices.

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“…14,15) Great efforts have been made to improve the quality of AlN grown on sapphire. High-temperature annealing (HTA) [16][17][18][19] probably is the most effective way to reduce the TDD. AlN films with TDDs about 2 × 10 8 cm −2 were acquired by HTA.…”

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confidence: 99%

The deterioration of AlN quality caused by residual gallium in the MOCVD reaction chamber

Zhang¹,

Yang²,

Zhao³

et al. 2022

Jpn. J. Appl. Phys.

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After several times of GaN epitaxial growth, the quality of the AlN template grown by metal-organic chemical vapor deposition deteriorated seriously even grown under the same procedure. However, the quality of the AlN template recovered a little the second time. It is found that this deterioration was enhanced if we increase the growth temperature. And this deterioration can be effectively weakened by omitting the baking procedure to cover the reactor chamber with AlN. The full width at half maximum (FWHM) of the X-ray rocking curve for AlN(102) significantly decreased from 1843 to 402 arcsec. This suggests that this deterioration of AlN quality is caused by residual gallium in the reactor chamber.

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Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

Cited by 11 publications

References 26 publications

Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs

Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs

Unexpected Realization of N-Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

The deterioration of AlN quality caused by residual gallium in the MOCVD reaction chamber

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