2019
DOI: 10.3390/coatings9020149
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Comprehensive Study of Au Nano-Mesh as a Catalyst in the Fabrication of Silicon Nanowires Arrays by Metal-Assisted Chemical Etching

Abstract: Silicon nanowires (SiNWs) arrays have become one of low-dimensional structural nanomaterials for the preparation of high-performance optoelectronic devices with the advantages of highly efficient light trapping effect, carrier multiplication, and adjustable optical bandgap. The controlled growth of SiNWs determines their electrical and optical properties. The morphology of silicon nanowires fabricated by conventional metal-assisted chemical etching (MACE) involving the Ag-based etching process cannot be precis… Show more

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Cited by 16 publications
(18 citation statements)
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“…The variations in the particles size and distribution can be attributed to the continuous gold oxidation and reduction, which implies its dissolution and reprecipitation may decrease the diameter polydispersity. Figure 3 shows the SEM micrographs collected after etching of the (100) (panels a, a'), (110) (panels b, b'), ( 111)B (panels c, c'), and (211) (panels d, d') surfaces. Similar results were discussed in a previous work [12], but the brief analysis presented here provides a better interpretation of photon recycling mechanism of the etched surface.…”
Section: Resultsmentioning
confidence: 99%
“…The variations in the particles size and distribution can be attributed to the continuous gold oxidation and reduction, which implies its dissolution and reprecipitation may decrease the diameter polydispersity. Figure 3 shows the SEM micrographs collected after etching of the (100) (panels a, a'), (110) (panels b, b'), ( 111)B (panels c, c'), and (211) (panels d, d') surfaces. Similar results were discussed in a previous work [12], but the brief analysis presented here provides a better interpretation of photon recycling mechanism of the etched surface.…”
Section: Resultsmentioning
confidence: 99%
“…The qualified Au films can be obtained by accurately controlling the input current, sputtering time and sputtering number. The sputtering parameters are selected as follows: current 3 mA, time 110 s, sputtering twice under this condition [ 23 ]. The Au film formed in the experiment cannot be broken due to the surface tension of the solution, nor can the Au nanomeshes be blocked by Au particles due to the closure effect [ 24 ].…”
Section: Methodsmentioning
confidence: 99%
“…The silicon substrate covered with the spatial mesh ordering of Au films are placed in the etching solution ratio of H 2 O 2 :HF:H 2 O = 5:12:37 for 60 min [ 23 ]. The surface morphologies of various ordered structures were investigated via SEM; the geometry of the arrays is shown in Figure 2 , demonstrating the excellent uniformity over large area that can be fabricated by this method.…”
Section: Methodsmentioning
confidence: 99%
“…Metal film can be deposited on Si wafer and used as a metal catalyst in a MACE approach. Several works report the use of metal film to offer several advantages in terms of geometry control, diameter, spacing, and density [ 79 , 99 , 112 , 113 , 114 ] compared to MACE approaches that involve layers of nanoparticles similarly to single step MACE (e.g., the silver salts). The metal geometry determines the formation of silicon nanostructures and self-assembly methods can also be used for masking.…”
Section: Metal Film or Two Step Macementioning
confidence: 99%