Comprehensive numerical and analytical study of two holes doped into the two-dimensional<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>t</mml:mi><mml:mo>−</mml:mo><mml:mi>J</mml:mi></mml:math>model

Chernyshev, A. L.; Leung, Pak Wo; Gooding, R. J.

doi:10.1103/physrevb.58.13594

Cited by 55 publications

(87 citation statements)

References 98 publications

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“…From values in Table I we find that E 2I = 13 it is tempting to interpret these numbers as evidence showing that two charge carriers in the electrondoped model have larger tendency to form a bound pair than in the t-J model. However, we have two reasons to believe that this is not a fair conclusion.…”

Section: Binding Energymentioning

confidence: 99%

“…As already pointed out in Ref. 13, we have no a priori reason to believe that E 2I can be extrapolated linearly in 1 / N, where N is the lattice size. Nevertheless, doing so with results at N = 16 and 32 we obtain E 2I ϳ −0.01.…”

Section: Binding Energymentioning

confidence: 99%

“…13 The only difference is that the locations of the maximum and minimum of the "dome" are interchanged compared to those in the t-J model. This is obviously due to the opposite signs of t in the two models.…”

Section: A One-electron Systemmentioning

confidence: 99%

“…This is certainly not a generic feature of t-J-like models because it is not found in the t-J model. 13 Note that ͑ ,0͒ and ͑0, ͒ are along the AFBZ boundary where ͗n k ͘ is not disguised by the generic dome-shape feature. Therefore these pocketlike features should reflect the physics of the systems.…”

Section: B Systems With Two and Four Electronsmentioning

confidence: 99%

“…The t-J model with up to four charge carriers on this lattice has been studied in detail using exact diagonalization. [12][13][14][15] But previous calculations on the electron-doped model on this lattice have been limited to two charge carriers only. 16 Since antiferromagnetic order in electron-doped cuprates is robust, we need more charge carriers to make the antiferromagnetic phase unstable.…”

Section: Introductionmentioning

confidence: 99%

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Charge carrier correlation in the electron-dopedt−Jmodel

Leung

2006

Phys. Rev. B

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We study the t-tЈ-tЉ-J model with parameters chosen to model an electron-doped high-temperature superconductor. The model with one, two, and four charge carriers is solved on a 32-site lattice using exact diagonalization. Our results demonstrate that at doping levels up to x = 0.125 the model possesses robust antiferromagnetic correlation. When doped with one charge carrier, the ground state has momenta ͑± ,0͒ and ͑0, ± ͒. On further doping, charge carriers are unbound and the momentum distribution function can be constructed from that of the single-carrier ground state. The Fermi surface resembles that of small pockets at single-charge-carrier ground-state momenta, which is the expected result in a lightly doped antiferromagnet. This feature persists upon doping up to the largest doping level we achieved. We therefore do not observe the Fermi surface changing shape at doping levels up to 0.125.

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Section: Binding Energymentioning

confidence: 99%

Section: Binding Energymentioning

confidence: 99%

Section: A One-electron Systemmentioning

confidence: 99%

Section: B Systems With Two and Four Electronsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Charge carrier correlation in the electron-dopedt−Jmodel

Leung

2006

Phys. Rev. B

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Ground State and Finite Temperature Lanczos Methods

Prelovšek

Bonča

2013

Springer Series in Solid-State Sciences

111

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The present review will focus on recent development of exact-diagonalization (ED) methods that use Lanczos algorithm to transform large sparse matrices onto the tridiagonal form. We begin with a review of basic principles of the Lanczos method for computing ground-state static as well as dynamical properties. Next, generalization to finite-temperatures in the form of well established finitetemperature Lanczos method is described. The latter allows for the evaluation of temperatures T > 0 static and dynamic quantities within various correlated models. Several extensions and modification of the latter method introduced more recently are analysed. In particular, the low-temperature Lanczos method and the microcanonical Lanczos method, especially applicable within the high-T regime. In order to overcome the problems of exponentially growing Hilbert spaces that prevent ED calculations on larger lattices, different approaches based on Lanczos diagonalization within the reduced basis have been developed. In this context, recently developed method based on ED within a limited functional space is reviewed. Finally, we briefly discuss the real-time evolution of correlated systems far from equilibrium, which can be simulated using the ED and Lanczos-based methods, as well as approaches based on the diagonalization in a reduced basis.

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Spectral Properties of Underdoped Cuprates

Ramšak

Prelovšek

Sega

2001

Open Problems in Strongly Correlated Electron Systems

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In the framework of the planar t-J model for cuprates we analyze the development of a pseudo gap in the density of states, which at low doping starts to emerge for temperatures T < J and persists up to the optimum doping. The analysis is based on numerical results for spectral functions obtained with the finite-temperature Lanczos method for finite two-dimensional clusters. Numerical results are additionally compared with the self consistent Born approximation (SCBA) results for hole-like (photoemission) and electron-like (inverse photoemission) spectra at T = 0. The analysis is suggesting that the origin of the pseudo gap is in short-range antiferromagnetic (AFM) spin correlations and strong asymmetry between the hole and electron spectra in the underdoped regime.We analyze also the electron momentum distribution function (EMD). Our analytical results for a single hole in an AFM based on the SCBA indicate an anomalous momentum dependence of EMD showing "hole pockets" coexisting with a signature of an emerging large Fermi surface (FS). The position of the incipient FS and the structure of the EMD is determined by the momentum of the ground state. The main observation is the coexistence of two apparently contradicting FS scenarios. On the one hand, the δ-function like contributions at (π/2, π/2) indicate, that for finite doping a pocket-like small FS evolves from these points, provided provided that AFM long range order persists. On the other hand, the discontinuity which appears at the same momentum is more consistent with with infinitesimally short arc (point) of an emerging large FS.

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Comprehensive numerical and analytical study of two holes doped into the two-dimensionalt−Jmodel

Cited by 55 publications

References 98 publications

Charge carrier correlation in the electron-dopedt−Jmodel

Charge carrier correlation in the electron-dopedt−Jmodel

Ground State and Finite Temperature Lanczos Methods

Spectral Properties of Underdoped Cuprates

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