Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

Alba, G.; Leinen, D.; Villar, M. P.; Alcántara, Rodrigo; Piñero, José Carlos; Fiori, Alexandre; Teraji, Tokuyuki; Araújo, D.

doi:10.1016/j.apsusc.2020.147874

Cited by 4 publications

(1 citation statement)

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“…Concerning diamond junctions' interface electronic phenomena, XPS can be used for the estimation of Schottky barrier height (SBH) in metal-diamond junctions [86][87][88], as well as band-offset in heterojunctions [89][90][91]. The estimation of the SBH is complementary to the electrical characterization, but its comparison gives an idea of the homogeneity of the contact throughout the contact area.…”

Section: Structural Characterization Techniquesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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